Zobrazeno 1 - 10
of 130
pro vyhledávání: '"Daehwan Jung"'
Autor:
May Angelu Madarang, Rafael Jumar Chu, Yeonhwa Kim, Quang Nhat Dang Lung, Eunkyo Ju, Won Jun Choi, Daehwan Jung
Publikováno v:
AIP Advances, Vol 13, Iss 4, Pp 045124-045124-6 (2023)
Tunnel junctions (TJs) are essential for high-performance multijunction solar cells to act as transparent low resistance paths for carriers to travel between adjacent cells. However, TJs typically exhibit highly degraded tunneling performance due to
Externí odkaz:
https://doaj.org/article/1362a735db7f4515b94b1242f362badf
Autor:
Yeonhwa Kim, May Angelu Madarang, Eunkyo Ju, Tsimafei Laryn, Rafael Jumar Chu, Tae Soo Kim, Dae-Hwan Ahn, Taehee Kim, In-Hwan Lee, Won Jun Choi, Daehwan Jung
Publikováno v:
Energies, Vol 16, Iss 3, p 1158 (2023)
Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells. Several micron-thick III–V compositionally graded buffers are typically grown to redu
Externí odkaz:
https://doaj.org/article/d04ab84e8b1b4a299e5c1732f6f8561d
Autor:
Namgi Hong, Dae-Myeong Geum, Tae Soo Kim, Seung-yeop Ahn, Jae-Hoon Han, Daehwan Jung, Geunhwan Ryu, SangHyeon Kim, Ki Jun Yu, Won Jun Choi
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 2, Pp n/a-n/a (2021)
Herein, an approach to form high‐quality GaAs‐based flexible photodetectors (PDs) is first demonstrated by metal wafer bonding (MWB) and high‐throughput epitaxial lift‐off (ELO) with encapsulated thermally grown silicon dioxide (t‐SiO2) for
Externí odkaz:
https://doaj.org/article/2e13f0dc0c614167926ee9508c1f0b91
Autor:
Daehwan Jung, Joseph Faucher, Samik Mukherjee, Austin Akey, Daniel J. Ironside, Matthew Cabral, Xiahan Sang, James Lebeau, Seth R. Bank, Tonio Buonassisi, Oussama Moutanabbir, Minjoo Larry Lee
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
Self-ordered heterogeneous nanostructures are of broad interest for both fundamental studies and technological applications. Here authors show that segregation in a multicomponent system during growth can yield highly strained germanium nanowire arra
Externí odkaz:
https://doaj.org/article/bff4c57359174cf39c85d545cef96abd
Publikováno v:
APL Photonics, Vol 3, Iss 3, Pp 030901-030901-20 (2018)
Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit
Externí odkaz:
https://doaj.org/article/e8dfb6182bf1458c846d1c491201e83d
Autor:
Quang Nhat Dang Lung, Rafael Jumar Chu, Yeonhwa Kim, Tsimafei Laryn, May Angelu Madarang, Oleksiy Kovalchuk, Yong-Won Song, In-Ho Lee, Changsoon Choi, Won Jun Choi, Daehwan Jung
Publikováno v:
Nano Letters. 23:3344-3351
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcca47ee5802ec0ad5f95593bb5b508d
https://doi.org/10.1021/acs.nanolett.3c00321
https://doi.org/10.1021/acs.nanolett.3c00321
Autor:
Yeonhwa Kim, Rafael Jumar Chu, Geunhwan Ryu, Seungwan Woo, Quang Nhat Dang Lung, Dae-Hwan Ahn, Jae-Hoon Han, Won Jun Choi, Daehwan Jung
Publikováno v:
ACS Applied Materials & Interfaces. 14:45051-45058
We report on the photoluminescence enhancement of 1.3 μm InAs quantum dots (QDs) epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs buffer thickness from 1000 to 250 nm was found to not only increase the coal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b3839cde0f257bb32c1a3ce4d742247
https://doi.org/10.1021/acsami.2c14492
https://doi.org/10.1021/acsami.2c14492
Publikováno v:
IEEE Journal of Photovoltaics. 12:976-981
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2415f50c05cac569fbb9dfe908fe36b
https://doi.org/10.1109/jphotov.2022.3176217
https://doi.org/10.1109/jphotov.2022.3176217
Autor:
Justin Norman, John E. Bowers, Christopher R. Fitch, Igor P. Marko, Stephen J. Sweeney, Daehwan Jung, Aidas Baltusis
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159f13a81fd4dd3b48c3793ff9e3b012
https://doi.org/10.1109/jstqe.2021.3101293
https://doi.org/10.1109/jstqe.2021.3101293
Autor:
Rafael Jumar Chu, Geunhwan Ryu, Seungwan Woo, Tae Soo Kim, Daehwan Jung, Soo Seok Kang, Jae-Hoon Han, Won Jun Choi, Namgi Hong, In Hwan Lee
Publikováno v:
ACS Applied Materials & Interfaces. 13:55648-55655
Current infrared thermal image sensors are mainly based on planar firm substrates, but the rigid form factor appears to restrain the versatility of their applications. For wearable health monitorin...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd5736afa5e210f1e88ad000f602d70
https://doi.org/10.1021/acsami.1c14687
https://doi.org/10.1021/acsami.1c14687