Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Daehan Han"'
Autor:
Bumjin Choi, Jinyoung Kang, Yong-Hyeon Kim, Kyusun Lee, Hyoungsun Hong, Gyo-Young Jin, Aeran Hong, Kweonjae Lee, Joosung Lee, Jinman Chang, Tae-Heon Kim, Hyoung Jun Kim, Daehan Han
Publikováno v:
SPIE Proceedings.
In a sub 2Xnm node process, the feedback of pattern weak points is more and more significant. Therefore, it is very important to extract the systemic defect in Double Patterning Technology(DPT), however, it is impossible to predict exact systemic def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a63d57a1e15a6c18143265bd6c65a5b
https://doi.org/10.1117/12.2218414
https://doi.org/10.1117/12.2218414
Autor:
Tae-Heon Kim, Yong-Hyeon Kim, Hyeongsun Hong, Joo-young Lee, Jinman Chang, Kyu-Pil Lee, Daehan Han, Jinyoung Kang, Aeran Hong, Bumjin Choi, Gyo-Young Jin, Kyusun Lee, Kweonjae Lee, Joosung Lee
Publikováno v:
SPIE Proceedings.
It is increasingly difficult to determine degree of completion of the patterning and the distribution at the DRAM Cell Patterns. When we research DRAM Device Cell Pattern, there are three big problems currently, it is as follows. First, due to etch l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df08c42b0907eb7a9083965ef612bd03
https://doi.org/10.1117/12.2084992
https://doi.org/10.1117/12.2084992
Autor:
Jinman Chang, Kyu-Pil Lee, Tae-Heon Kim, Hyeongsun Hong, Kye-hee Yeom, Kyusun Lee, Aeran Hong, Yong-Hyeon Kim, Kweonjae Lee, Joosung Lee, Jinyoung Kang, Joo-young Lee, Bumjin Choi, Gyo-Young Jin, Daehan Han
Publikováno v:
SPIE Proceedings.
Starting with the sub 2Xnm node, the process window becomes smaller and tighter than before. Pattern related error budget is required for accurate critical-dimension control of Cell layers. Therefore, lithography has been faced with its various diffi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35403c0d3bae37ad232e2e2e18bc6eaf
https://doi.org/10.1117/12.2085004
https://doi.org/10.1117/12.2085004
Autor:
Kinam Kim, Hyungtak Kim, Sung-Sam Lee, Daehan Han, Yun-gi Kim, Byung-Il Ryu, Sang-Ho Kim, Chang-hyun Cho, Saehan Kwon, J.M. Park, Sungho Jang, Yangsoo Sung, Sangmin Jun, Wontae Park, Ji-Hoon Kim
Publikováno v:
Physica C: Superconductivity. 423:29-36
For the first time, we developed 70nm DRAM technology applicable to a manufacturing level. This technology is aimed at DDR-3 application, which requires low-voltage operation and high speed performance. Fully working 70nm DRAMs were realized combinin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15365c45851d5b5f2d0be0e97157bfb4
https://doi.org/10.1016/j.physc.2005.03.020
https://doi.org/10.1016/j.physc.2005.03.020
Autor:
Kweonjae Lee, Joosung Lee, Tae-Heon Kim, Aeran Hong, Daehan Han, Yongjik Park, Yong-Hyeon Kim, Yun-Hye Chu
Publikováno v:
Design for Manufacturability through Design-Process Integration VI.
As semiconductor process technology scales down to sub 30nm process node and beyond dimensions, the printability and process window of the lithographic patterns are seriously reduced due to the fundamental limit of the lithography and process variati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e77047a3342fe8e67dc05a6688c480
https://doi.org/10.1117/12.915934
https://doi.org/10.1117/12.915934
Autor:
Daehan Han, Yoon-Min Kim, Aeran Hong, In-Ho Nam, Hong-Ji Lee, Min-Chul Han, Kyungseok Oh, Yongjik Park, Yong-Hyeon Kim, Tae Heon Kim
Publikováno v:
SPIE Proceedings.
Semiconductor industry has been experiencing rapid and continuous shrinkage of feature size along with Moore's law. As the VLSI technology scales down to sub 40nm process node. Control of critical dimension (CD) and Extraction of Unanticipated weak p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c9769c2a883fb032e012237b891030
https://doi.org/10.1117/12.879033
https://doi.org/10.1117/12.879033
Autor:
null Hyungtak Kim, null Sangho Kim, null Sungsam Lee, null Sungho Jang, null Ji-hoon Kim, null Yangsoo Sung, J. Puk, null Saehan Kwon, null Sangmin Jun, null Wontae Park, null Daehan Han, null Changhyun Cho, null Yungi Kim, null Kinam Kim, null Byungil Ryu
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f692ce6b3d4915d2c0b70b3031bcce48
https://doi.org/10.1109/vtsa.2005.1497069
https://doi.org/10.1109/vtsa.2005.1497069
Autor:
Hyungtak Kim, Sangho Kim, Sungsam Lee, Sungho Jang, Ji-hoon Kim, Yangsoo Sung, Junwoong Park, Saehan Kwon, Sangmin Jun, Wontae Park, Daehan Han, Changhyun Cho, Yungi Kim, Kinam Kim, Byungil Ryu
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech); 2005, p29-30, 2p