Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Dae-Won Ha"'
1
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis
Autor: Woojin Rim, Sunghyun Park, Jong-Hoon Jung, Sungwee Cho, Lee Seung-Young, Dae-Won Ha, Hyung-Soon Jang, Bongjae Kwon, Chul-Hong Park, Jeongho Do, Hoonki Kim, Giyong Yang, Jae-Seung Choi, Taejung Lee, Minsun Hong, Yongjae Choo, Yongho Kim, Lim Jin-Young, Sanghoon Baek, Changnam Park, Hyun-Taek Jung, Kim In-Gyum, Taejoong Song
Publikováno v: ISSCC
Conventional patterning techniques, such as self-aligned double patterning (SADP) and litho-etch-litho-etch (LELE), have paved the way for the extreme ultraviolet (EUV) technology that aims to reduce the photomask steps [1,2]. EUV adds the extreme sc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ea8f7cb504c90b3f97119c24dc7956e
https://doi.org/10.1109/isscc.2017.7870334
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2
Writing current reduction and total set resistance analysis in PRAM
Autor: Dae-Won Ha, Jun-Ho Shin, Gwan-Hyeob Koh, H.S. Jeong, Y. Fai, C.W. Jeong, Y.T. Oh, Gitae Jeong, Jonghyun Oh, Ji-Hee Kim, Kinam Kim, Soon-oh Park, Dong-won Lim, Jae-Sung Kim, Young-woo Song, Jeong-Taek Kong, Kyung-Chang Ryoo, J.H. Yoo, Jae-Hyun Park, D.H. Kang, J.H. Park
Publikováno v: Solid-State Electronics. 52:591-595
We evaluated the limit of scaling bottom electrode contact (BEC) heater size and high resistivity heater to reduce writing current. It was found that the resistivity of heater should be increased for reducing writing current below the heater size of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc08e2f15979492b104497b8d792d864
https://doi.org/10.1016/j.sse.2008.01.011
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3
Novel cell transistor using retracted Si/sub 3/N/sub 4/-liner STI for the improvement of data retention time in gigabit density DRAM and beyond
Autor: Dae-Won Ha, Kinam Kim, Joo-young Lee
Publikováno v: IEEE Transactions on Electron Devices. 48:1152-1158
In this paper, we propose a novel cell transistor using retracted Si/sub 3/N/sub 4/-liner STI (shallow trench isolation) for the enhanced and reliable operation of 256-Mb dynamic random access memory (DRAM) in 0.15-/spl mu/m technology. As the techno
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5dbc1d47f399331a9da402a4cceecbc8
https://doi.org/10.1109/16.925241
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4
A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 μm technology node and beyond
Autor: Gwan-Hyeob Koh, Yongseok Ahn, Hongsik Jeong, Tae-Young Chung, Jaegu Lee, Dong-won Shin, Dae-Won Ha, Kinam Kim, Sang-Hyeon Lee
Publikováno v: IEEE Transactions on Electron Devices. 47:1499-1506
In this paper, a 0.15 /spl mu/m embedded DRAM technology is described which provides a cost-effective means of delivering high bandwidth, low power consumption, noise immunity, and a small foot print chip. The key technologies for high performance tr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::543c91f337d47a0971a6012210ad34aa
https://doi.org/10.1109/16.848299
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5
Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices
Autor: Chang-hyun Cho, Tae-Young Chung, Dong-won Shin, Kinam Kim, Gwan-Hyeob Koh, Dae-Won Ha
Publikováno v: IEEE Transactions on Electron Devices. 46:940-946
As the density of dynamic random access memory (DRAM) increases up to giga-bit regime, one of the important problems is the control of the process-induced defects and damage. Although the shallow trench isolation (STI) is widely used for deep submicr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec2e50f4a682869c09617bb4ffa4d0ee
https://doi.org/10.1109/16.760401
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6
Active Width Modulation (AWM) for cost-effective and highly reliable PRAM
Autor: S. W. Nam, Sunkook Kim, Taehyun An, S.J. Ahn, K. R. Sim, Sang-Hyun Hong, Chilhee Chung, J.W. Lee, Gitae Jeong, Sang-Yong Kim, Byeung-Chul Kim, Gwan-Hyeob Koh, K. W. Lee, Dae-Won Ha, J. H. Yu
Publikováno v: 2012 International Electron Devices Meeting.
This paper presents, for the first time, the Active Width Modulation (AWM) technology which compensates a string resistance with the active widths of local Y selectors for the purpose of increasing the number of cells-per-string (CPS). The AWM is dem
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24799703937432c3d76245b24b0ae9fa
https://doi.org/10.1109/iedm.2012.6479148
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8
Two-bit cell operation in diode-switch phase change memory cells with 90nm technology
Autor: Chang-Yong Um, Yoon-Jong Song, F. Yeung, Jae-joon Oh, J.H. Kong, Gitae Jeong, Dae-Won Ha, Woon Ik Park, Junha Lee, J. H. Kim, Y.J. Jeon, Mi-Hyang Lee, D-H. Kang, J.H. Park, H.S. Jeong, J. Yu
Publikováno v: 2008 Symposium on VLSI Technology.
This paper firstly reports key factors which are to be necessarily considered for the successful two-bit (four-level) cell operation in a phase-change random access memory (PRAM). They are: 1) the write-and-verify (WAV) writing of four-level resistan
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::813b55b59508e739c3b57808f561e0d2
https://doi.org/10.1109/vlsit.2008.4588577
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9
Recent Advances in High Density Phase Change Memory (PRAM)
Autor: Kinam Kim, Dae-Won Ha
Publikováno v: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Phase-change Random Access Memory (PRAM) has drawn much attention as a promising candidate for the next generation nonvolatile memory. This is because PRAM has a great potential not only to provide adequate solutions for solving the scaling issues th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7651021bc45bda7b0bb641f96ffee923
https://doi.org/10.1109/vtsa.2007.378939
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