Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dae-Hyoun Jung"'
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c61deb8441af88c36662f13b0c719c7e
https://doi.org/10.7567/ssdm.2009.p-3-16
https://doi.org/10.7567/ssdm.2009.p-3-16
Publikováno v:
2008 International SoC Design Conference.
RF non-quasi-static effect and interconnection delay effect are not considered in a conventional BSIM3v3 RF model. For modeling these effects, an improved RF SPICE model for 0.13 mum MOSFET is developed by including the scalable inductances and using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f080f8dc22984f1e9e751ddf59155c0
https://doi.org/10.1109/socdc.2008.4815665
https://doi.org/10.1109/socdc.2008.4815665
Publikováno v:
Japanese Journal of Applied Physics. 49:04DC22
An improved RF method based on the slope extraction of the total drain–source resistance and total gate charge versus mask gate length from measured S-parameters is presented to extract the effective channel mobility of bulk metal–oxide–semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09fb0bd7d431a643a96bc8cd133a054a
https://doi.org/10.1143/jjap.49.04dc22
https://doi.org/10.1143/jjap.49.04dc22
Publikováno v:
2008 International SoC Design Conference; 2008, pI431-I432, 2p