Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Dae-Ho Rho"'
Publikováno v:
Materials Science Forum. :701-704
SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ~ 60nm diameters and lengths of several micrometers. Nanorod.s diameters and lengths were different by kind of catalysts. Nanorod.s growth scheme was divided by two regions with di
Publikováno v:
MRS Proceedings. 832
ABSTRCT:SiOx nanowire were synthesized using VLS (vapor-liquid-solid) and SLS (ssolid-liquid-solid) growth mechanism. Grown nanowires had a different shapes by the kind of substrates and kind of catalysts. Diameters and lengths of grown nanowires wer
Publikováno v:
MRS Proceedings. 832
SiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10∼60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two
Publikováno v:
Korean Journal of Materials Research. 15:189~194-189~194
Publikováno v:
Korean Journal of Materials Research. 13:668~672-668~672
The ZnO nanorods were synthesized using vapor-solid (VS) method on sodalime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of Zn powder at . As-fabricated ZnO nanorods had an average diameter an
Publikováno v:
Korean Journal of Materials Research. 13:677~682-677~682
SiC nanowires were synthesized by carbothermal reduction using metal catalysts. Synthesized nanowires had mean diameters of 30∼50 nm and several length. The kind of catalysts affects form of SiC nanowire because of difference of growth mechanisms.
Publikováno v:
Korean Journal of Materials Research. 13:404~408-404~408
SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted
Publikováno v:
MRS Online Proceedings Library; 2004, Vol. 832 Issue 1, p274-278, 5p
Publikováno v:
MRS Online Proceedings Library; 2004, Vol. 832 Issue 1, p268-273, 6p