Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Dae Seon Kwon"'
Publikováno v:
ACS Applied Electronic Materials. 4:2005-2014
Autor:
Woojin Jeon, Dae Seon Kwon, Dong Gun Kim, Haengha Seo, Cheol Seong Hwang, Junil Lim, Tae Kyun Kim
Publikováno v:
ACS Applied Materials & Interfaces. 13:23915-23927
Ruthenium (Ru) thin films deposited via atomic layer deposition (ALD) with a normal sequence and discrete feeding method (DFM) and their performance as a bottom electrode of dynamic random-access memory (DRAM) capacitors were compared. The DFM-ALD wa
Autor:
Dae Seon Kwon, Woojin Jeon, Junil Lim, Sang Hyeon Kim, Cheol Seong Hwang, Dong Gun Kim, Cheol Hyun An
Publikováno v:
Journal of Materials Chemistry C. 9:1572-1583
Atomic layer deposited TiO2- and Al2O3-based high-k gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application. The single-layer TiO2 film showed a too high leakage current to be use
Autor:
Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Woojin Jeon, Junil Lim, Cheol Seong Hwang, Dae Seon Kwon
Publikováno v:
Journal of Materials Chemistry C. 8:6993-7004
In this study, ruthenium (Ru) thin films were grown on Ta2O5, Si, Ru, and Pt substrates (Ta2O5, Ru, and Pt are thin films, and Si is a bulk wafer) through atomic layer deposition (ALD) using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru [Rude
Autor:
Woojin Jeon, Cheol Hyun An, Sang Hyeon Kim, Cheol Seong Hwang, Dae Seon Kwon, Dong Gun Kim, Woongkyu Lee, Cheol Jin Cho
Publikováno v:
The Journal of Physical Chemistry C. 123:22539-22549
The growth behaviors of atomic-layer-deposited (ALD) Ru thin films using the RuO4 precursor and N2/H2 mixed reduction gas on Ta2O5 thin-film/Si substrates were examined. The Ru films deposited on t...
Autor:
Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung‐Hae Choi, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials. 8:2200099
Autor:
Cheol Hyun An, Dong Gun Kim, Soon Hyung Cha, Sang Hyeon Kim, Woongkyu Lee, Dae Seon Kwon, Cheol Seong Hwang, Seong Tak Cho
Publikováno v:
ACS Applied Materials & Interfaces. 10:41544-41551
The atomic layer deposition process of SrTiO3 (STO) films at 230 °C was studied with Sr(iPr3Cp)2 and Ti(CpMe5)(OMe)3 (Pr, Cp, and Me are propyl, cyclopentadienyl, and methyl groups, respectively) o...
Autor:
Sang Hyeon, Kim, Woongkyu, Lee, Cheol Hyun, An, Dae Seon, Kwon, Dong-Gun, Kim, Soon Hyung, Cha, Seong Tak, Cho, Cheol Seong, Hwang
Publikováno v:
ACS applied materialsinterfaces. 10(48)
The atomic layer deposition process of SrTiO
Autor:
Woongkyu Lee, Haeryoung Kim, Cheol Seong Hwang, Tae Kyun Kim, Junil Lim, Dae Seon Kwon, Haengha Seo, Heewon Paik, Dong Gun Kim
Publikováno v:
Journal of Physics D: Applied Physics. 54:185110
Y2O3/TiO2 bilayer thin films and Y-doped TiO2 (YTO) thin films were deposited on a Ge substrate by atomic layer deposition at a substrate temperature of 250 °C. They were used as gate insulators to examine the electrical properties of Pt/TiN/TiO2/Y2
Autor:
Woongkyu Lee, Tae Kyun Kim, Junil Lim, Dae Seon Kwon, Haengha Seo, Cheol Seong Hwang, Dong Gun Kim
Publikováno v:
Advanced Electronic Materials. 7:2000819