Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Dae Kyu Choi"'
Autor:
Seok Yong Park, Sang Jun Moon, Dae Kyu Choi, Jin-ho Lee, Youn-Hee Han, Min Kim, Yong-hwan Kim
Publikováno v:
The Journal of Korean Institute of Communications and Information Sciences. :879-894
Recently, due to a explosive growth in the mobile Internet traffic, the problem of excessive data traffic handling on core network and thus scalability problem have been magnified in 3GPP LTE/SAE networks. Current LTE/SAE network based on the central
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5ede6863166be7450bf6dcfee74c85f
https://doi.org/10.7840/kics.2013.38b.11.879
https://doi.org/10.7840/kics.2013.38b.11.879
Publikováno v:
Thin Solid Films. 546:279-283
Chalcopyrite CuIn1 − xGaxSe2 (CIGS; x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ffcf2fce957714d896693a72e44f71a
https://doi.org/10.1016/j.tsf.2013.06.047
https://doi.org/10.1016/j.tsf.2013.06.047
Publikováno v:
Journal of the Korea Institute of Military Science and Technology. 15:288-297
This paper describes the verification test on Electromagnetic Environmental Effects(E3), which conducted on ground as a final step to confirm the normal operation of ELINT pod and Safety-of-Flight of KF-16C/D mounted with ELINT pod prior to the initi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb42c8cfec6cfa3f47a895746842099
https://doi.org/10.9766/kimst.2012.15.3.288
https://doi.org/10.9766/kimst.2012.15.3.288
Publikováno v:
Korean Chemical Engineering Research. 50:118-127
고분자전해질 연료전지용 분리판 소재로 스텐레스 강의 내식성과 전기전도성을 향상시키기 위해 표면을 TiN(titanium nitride) 또는 Ti/TiN(titanium/titanium nitride)으로 코팅하여 연료전지 운전환경에
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b0f36dbb5f76320b9714e0b85dafe99
https://doi.org/10.9713/kcer.2012.50.1.118
https://doi.org/10.9713/kcer.2012.50.1.118
Autor:
Joong Hwee Cho, Jae Min Myoung, Joyti Prakash Kar, Dae Kyu Choi, Tae Il Lee, Min Jung Lee, Dongwon Lee
Publikováno v:
Vacuum. 85:1032-1036
Hydrogenated thin silicon nitride (SiN x :H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH 3 and SiH 4 gas flow ratios [R = NH 3 /(SiH 4 + NH 3 )], where the flow rate of NH 3 was varied by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b385441d82c5bc7da5c89f070660c40
https://doi.org/10.1016/j.vacuum.2011.03.012
https://doi.org/10.1016/j.vacuum.2011.03.012
Publikováno v:
The Transactions of the Korean Institute of Power Electronics. 15:274-281
This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa1bb1ebb6178665107a8cf5bf230a2
https://doi.org/10.6113/tkpe.2010.15.4.274
https://doi.org/10.6113/tkpe.2010.15.4.274
Autor:
Beom Hoan O, Chang-Jin Kang, Chin-Wook Chung, Dae-Kyu Choi, Joung Ho Lee, Suk-Ho Joo, Se-Geun Park, Jong Woo Lee, Junghoon Joo, Sung Kyeong Kim, Seung Gol Lee, Park Soon, Wan Jae Park, Duck Jin Chung, Chung-Gon Yoo, Joohee Kim, Sang-Deog Cho, Hyoun Woo Kim, Woon Suk Hwang, Jeong-Yeol Jang, Keeho Kim, Young-Chang Joo, Sung Pil Chang
Publikováno v:
Microelectronic Engineering. 85:300-303
We have investigated the characteristics of Ar/O"2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O"2/(O"2+Ar) gas flow ratio significantly affected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc662b8467894843fae89ff7529da910
https://doi.org/10.1016/j.mee.2007.06.016
https://doi.org/10.1016/j.mee.2007.06.016
Publikováno v:
Journal of the Korean Institute of Illuminating and Electrical Installation Engineers. 20:6-14
This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2f9a85b53d7fe87f1e5035f9fd68eff
https://doi.org/10.5207/jieie.2006.20.8.006
https://doi.org/10.5207/jieie.2006.20.8.006
Autor:
Wan Jae Park, Chung-Gon Yoo, Hyoun Woo Kim, Chin-Wook Chung, Dae-Kyu Choi, Chang-Jin Kang, Nam Ho Kim, Ju Hyun Myung
Publikováno v:
Vacuum. 80:193-197
The characteristics of photoresist (PR) ashing using N 2 plasmas in a ferrite core inductively coupled plasma etcher have been studied and the effect of bias power and gas flow rate on PR ash rate and low- k material etch rate has been investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1690792ea13d58cc5cfd16cb644ed581
https://doi.org/10.1016/j.vacuum.2005.08.009
https://doi.org/10.1016/j.vacuum.2005.08.009
Publikováno v:
The KIPS Transactions:PartC. :213-218
Recently MIP becomes more important for the macro mobility support in the emergence of the global system such as IMT-2000. However this Protocol suffers from many weaknesses on the location management. MIPv4 regional registration is presented for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f7f1373f9d3126caa5b0967daca84e
https://doi.org/10.3745/kipstc.2004.11c.2.213
https://doi.org/10.3745/kipstc.2004.11c.2.213