Zobrazeno 1 - 10 of 43 pro vyhledávání: '"Dae Hwan Ahn"'
1
Akademický článek
Why Does the Optimal Tuning Method of the Range Separation Parameter of a Long-Range Corrected Density Functional Fail in Intramolecular Charge Transfer Excitation Calculations?
Autor: Han-Seok Bae, Dae-Hwan Ahn, Jong-Won Song
Publikováno v: Molecules, Vol 29, Iss 18, p 4423 (2024)
We performed intra- and intermolecular charge transfer (CT) excitation energy calculations of (a) conjugated carbon chain [H2N–(CH=CH)n–X] and (b) its equidistant H2NH∙∙∙HX (n = 2~8) with various electron acceptors (X = NH2, OH, Cl, CHO, CN
Externí odkaz: https://doaj.org/article/6432660f5cbe431ebcad5e2740bf48b5
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2
Akademický článek
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate
Autor: Tae Soo Kim, Sung‐Han Jeon, Kyeol Ko, Dae‐Hwan Ahn, Jae‐Hoon Han, Won Jun Choi, Ki Jun Yu
Publikováno v: Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Photodetectors sensing the short‐wave infrared (SWIR) region have great potential due to their significant advantages in a variety of applications because SWIR light possesses both characteristics of visible light and infrared light. Among
Externí odkaz: https://doaj.org/article/3675b2a0f98447ef949b173c8e082090
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3
Akademický článek
GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer
Autor: Yeonhwa Kim, May Angelu Madarang, Eunkyo Ju, Tsimafei Laryn, Rafael Jumar Chu, Tae Soo Kim, Dae-Hwan Ahn, Taehee Kim, In-Hwan Lee, Won Jun Choi, Daehwan Jung
Publikováno v: Energies, Vol 16, Iss 3, p 1158 (2023)
Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells. Several micron-thick III–V compositionally graded buffers are typically grown to redu
Externí odkaz: https://doaj.org/article/d04ab84e8b1b4a299e5c1732f6f8561d
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5
Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays
Autor: Taewon Jin, Sanghyeon Kim, Jae-Hoon Han, Dae-Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim
Publikováno v: Nanoscale Advances. 5:1316-1322
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO2 into the gate stack of the TFT.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a49d63f86d32acd61b0fd062512aa66
https://doi.org/10.1039/d2na00713d
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6
Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission
Autor: Yeonhwa Kim, Rafael Jumar Chu, Geunhwan Ryu, Seungwan Woo, Quang Nhat Dang Lung, Dae-Hwan Ahn, Jae-Hoon Han, Won Jun Choi, Daehwan Jung
Publikováno v: ACS Applied Materials & Interfaces. 14:45051-45058
We report on the photoluminescence enhancement of 1.3 μm InAs quantum dots (QDs) epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs buffer thickness from 1000 to 250 nm was found to not only increase the coal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b3839cde0f257bb32c1a3ce4d742247
https://doi.org/10.1021/acsami.2c14492
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8
Assessment of long‐range corrected density functional theory on the absorption and vibrationally resolved fluorescence spectrum of carbon nanobelts
Autor: Jong-Won Song, Dae-Hwan Ahn
Publikováno v: Journal of Computational Chemistry. 42:505-515
Time-dependent (TD) density functional theory (DFT) and Franck-Condon Hertzberg-Teller (FCHT) calculations of various DFT functionals [B3LYP, CAM-B3LYP, ωB97XD, and optimally tuned (OT) long-range corrected (LC)-BLYP] were performed to examine how w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e07fdcae67d9731c0507e06c2c8addb2
https://doi.org/10.1002/jcc.26473
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9
Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing
Autor: Dae-Hwan Ahn, Suman Hu, Kyeol Ko, Donghee Park, Hoyoung Suh, Gyu-Tae Kim, Jae-Hoon Han, Jin-Dong Song, YeonJoo Jeong
Publikováno v: ACS applied materialsinterfaces. 14(21)
A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5425fc0216c791287b46b8354165d2f7
https://pubmed.ncbi.nlm.nih.gov/35580309
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10
Predicting whether aromatic molecules would prefer to enter a carbon nanotube: A density functional theory study
Autor: Chiyoung Park, Jong-Won Song, Dae-Hwan Ahn
Publikováno v: Journal of Computational Chemistry. 41:1261-1270
The interaction of a carbon nanotube (CNT) with various aromatic molecules, such as aniline, benzophenone, and diphenylamine, was studied using density functional theory able to compute intermolecular weak interactions (B3LYP-D3). CNTs of varying len
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e4fc361202ef230be963eeadbcac160
https://doi.org/10.1002/jcc.26173
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