Zobrazeno 1 - 10
of 1 389
pro vyhledávání: '"Dae Hwan, Kim"'
Autor:
Dae‐Hwan Kim, Minjeong Sung, Myong‐Suk Park, Eun‐Gene Sun, Sumin Yoon, Kyung Hyun Yoo, Kamalakannan Radhakrishnan, Sung Yun Jung, Woo‐Kyun Bae, Sang‐Hee Cho, Ik‐Joo Chung
Publikováno v:
Cancer Communications, Vol 44, Iss 10, Pp 1106-1129 (2024)
Abstract Background Increased Galectin 3‐binding protein (LGALS3BP) serum levels have been used to assess hepatic fibrosis stages and the severity of hepatocellular carcinoma (HCC). Considering the crucial role of transforming growth factor‐β1 (
Externí odkaz:
https://doaj.org/article/c3b44f6f6e2b460c8e2108f0bb0c616e
Publikováno v:
Frontiers in Physiology, Vol 15 (2024)
IntroductionA single bout of aerobic exercise is known to induce a temporary reduction in post-exercise blood pressure termed post-exercise hypotension (PEH). Meanwhile, an ischemic preconditioning (IPC), a series of short ischemia-reperfusion interv
Externí odkaz:
https://doaj.org/article/32162f46210d4dd68f7be2059e341a62
Autor:
Jingyu Park, Seungwon Go, Woojun Chae, Chang Il Ryoo, Changwook Kim, Hyungju Noh, Seonggeun Kim, Byung Du Ahn, In-Tak Cho, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park, Sangwan Kim, Dae Hwan Kim
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract In this paper, the floating body effect (FBE) in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) and the mechanism of device failure caused by that are reported for the first time. If the toggle AC pulses are applied to the gate
Externí odkaz:
https://doaj.org/article/5f711601b71347d4922d187adbf0a41c
Autor:
Hyo-In Yang, Hanbin Lee, Jeonghee Ko, Yulim An, Gyeongsu Min, Dong Myong Kim, Dae Hwan Kim, Jong-Ho Bae, Meehyun Lim, Sung-Jin Choi
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract Carbon nanotube networks (CNTs)-based devices are well suited for the physically unclonable function (PUF) due to the inherent randomness of the CNT network, but CNT networks can vary significantly during manufacturing due to various control
Externí odkaz:
https://doaj.org/article/30c6a4127cb342e7b66ec538d2c64620
Publikováno v:
Vascular Specialist International, Vol 40 (2024)
Externí odkaz:
https://doaj.org/article/180f1de0e45845c1ad962fea90ddf88a
Autor:
Jae Kyun Park, Dae Hwan Kim, Tae-Yong Jeon, Sang-Ho Jeong, Tae Han Kim, Jae-Seok Min, Rock Bum Kim, Young Joon Lee, Ji Ho Park, Young Gil Son, Ki Young Yoon, Kyung Won Seo, Ki Hyun Kim, Yoonhong Kim, Hyun Dong Chae, Sun Hwi Hwang, Si-Hak Lee, Jae Hun Chung, Hyoung-Il Kim, Dong Jin Park, Kwang Hee Kim, Sang Hyuk Seo, Sung Jin Oh, Woo Yong Lee, Chang In Choi
Publikováno v:
Trials, Vol 25, Iss 1, Pp 1-10 (2024)
Abstract Background Petersen’s hernia, which occurs after Billroth-II (B-II) or Roux-en-Y (REY) anastomosis, can be reduced by defect closure. This study aims to compare the incidence of bowel obstruction above Clavien–Dindo classification grade
Externí odkaz:
https://doaj.org/article/d19a8eceefaf4de7849b1110e02bd68a
Autor:
Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 12, Pp 28531-28537 (2024)
Obtaining symmetrical and highly linear synapse weight update characteristics of analog resistive switching devices is critical for attaining high performance and energy efficiency of the neural network system. In this work, based on the two-terminal
Externí odkaz:
https://doaj.org/article/83132ecb329e4de7a490a76eceb416e7
Autor:
Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
Publikováno v:
IEEE Access, Vol 12, Pp 23881-23886 (2024)
Accurate current-voltage (I-V) modeling based on the Berkeley short-channel insulated-gate field-effect transistor model (BSIM) is pivotal for integrated circuit simulation. However, the current BSIM model does not support a buried-channel-array tran
Externí odkaz:
https://doaj.org/article/be40799b6d1e4e5da92ee9cb9d41dd5d
Autor:
Yun Jae Eo, Sung-woo Choi, Chohui Kim, Seulgee Lee, Chulsoo Yoon, Dae Hwan Kim, Changwook Kim, Young Rag Do
Publikováno v:
ACS Omega, Vol 8, Iss 48, Pp 45547-45556 (2023)
Externí odkaz:
https://doaj.org/article/c9d6ad766a1f40a0b5fe7a7d88d1ded5
Autor:
Jingyu Park, Sungju Choi, Changwook Kim, Hong Jae Shin, Yun Sik Jeong, Jong Uk Bae, Saeroonter Oh, Dae Hwan Kim
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract Oxide semiconductor thin-film transistors (TFTs) are used in the pixel array and gate driver circuits of organic light emitting diode (OLED) display panels. Long-term reliability characteristics of the TFTs are a barometer of the lifetime of
Externí odkaz:
https://doaj.org/article/5fa177f19649474b82be59c245aacd64