Zobrazeno 1 - 10
of 248
pro vyhledávání: '"Dae Hong Ko"'
Autor:
Gwihyun Kim, Seran Park, Hyunsu Shin, Seungho Song, Hoon-Jung Oh, Dae Hong Ko, Jung-Il Choi, Seung Jae Baik
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125310-125310-12 (2017)
Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent f
Externí odkaz:
https://doaj.org/article/ed46d98652ec4b8b9d1048ee019c116c
Autor:
Chang-Hun Song, Minwoo Kong, Hyunchul Jang, Sang Tae Lee, Hyeong-Ho Park, Donghyun Kim, Keunman Song, Dae-Hong Ko, Chan-Soo Shin
Publikováno v:
Crystals, Vol 12, Iss 12, p 1846 (2022)
In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the direction
Externí odkaz:
https://doaj.org/article/043c12bcb3b44fca97ccc3151ccff131
Autor:
Yongjoon Choi, Choonghee Cho, Dongmin Yoon, Joosung Kang, Jihye Kim, So Young Kim, Dong Chan Suh, Dae-Hong Ko
Publikováno v:
Materials, Vol 15, Iss 19, p 6918 (2022)
We investigated the selective etching of Si versus Si1−xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1−xGex with a higher Ge concentration was etche
Externí odkaz:
https://doaj.org/article/36935f7dda654057a832926875b01e26
Autor:
In-Geun Lee, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, Sang-Kuk Kim, Jae-Gyu Kim, Jacob Yun, Ted Kim, Jung-Hee Lee, Chan-Soo Shin, Jae-Hak Lee, Kwang-Seok Seo, Dae-Hyun Kim
Publikováno v:
Electronics; Volume 11; Issue 17; Pages: 2744
In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated throu
Publikováno v:
Thin Solid Films. 775:139851
Autor:
Yongjoon Choi, Kiseok Lee, Dae Seop Byeon, Dae Hong Ko, Seunghyun Baik, Dongmin Yoon, Choonghee Cho
Publikováno v:
Journal of the Korean Physical Society. 78:712-718
High-order silane precursors, including trisilane, are candidates for the low-temperature epitaxy process owing to the low energy of Si–Si bond. Higher order silanes are regarded as being more reactive than lower order ones. We compared the SiGe ep
Autor:
Seung Won Yun, Dae-Hyun Kim, Hideaki Matsuzaki, Jun Gyu Kim, Dae Hong Ko, Hyeon Bhin Jo, Takuya Tsutsumi, In Geun Lee, Hiroki Sugiyama
Publikováno v:
Journal of the Korean Physical Society. 78:516-522
Herein we describe theoretical and experimental analysis of the source resistance (Rs) components in In0.7Ga0.3As/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate. First, we analytically modeled Rs using
Publikováno v:
Thin Solid Films. 771:139758
Publikováno v:
Journal of the Korean Physical Society. 78:290-296
As the size of a transistor decreases, the parasitic resistances of the transistor become dominant for contact resistance. In-situ phosphorus-doped epitaxial silicon with high doping concentrations has been used to reduce contact resistivity. In this
Autor:
Joung Eun Yoo, Soobin Hwang, Won Tae Kim, Do Hyang Kim, Choonghee Cho, Hye Jung Chang, Du S. Yoon, Sung D. Kim, Yong Joo Kim, Hyeong-Chai Jeong, Eun-sung Lee, Hoyoung Suh, Yongjoon Choi, Dasol Kim, Mann Ho Cho, Dae Hong Ko
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Phase-change memory utilizing amorphous-to-crystalline phase-change processes for reset-to-set operation as a nonvolatile memory has been recently commercialized as a storage class memory. Unfortunately, designing new phase-change materials (PCMs) wi