Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Dae‐Hwan Ahn"'
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Photodetectors sensing the short‐wave infrared (SWIR) region have great potential due to their significant advantages in a variety of applications because SWIR light possesses both characteristics of visible light and infrared light. Among
Externí odkaz:
https://doaj.org/article/3675b2a0f98447ef949b173c8e082090
Autor:
Yeonhwa Kim, May Angelu Madarang, Eunkyo Ju, Tsimafei Laryn, Rafael Jumar Chu, Tae Soo Kim, Dae-Hwan Ahn, Taehee Kim, In-Hwan Lee, Won Jun Choi, Daehwan Jung
Publikováno v:
Energies, Vol 16, Iss 3, p 1158 (2023)
Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells. Several micron-thick III–V compositionally graded buffers are typically grown to redu
Externí odkaz:
https://doaj.org/article/d04ab84e8b1b4a299e5c1732f6f8561d
Autor:
Eunsung Park, Won-Yong Ha, Hyo-Sung Park, Doyoon Eom, Hyun-Seung Choi, Dae-Hwan Ahn, Woo-Young Choi, Myung-Jae Lee
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. :1-8
Autor:
Taewon Jin, Sanghyeon Kim, Jae-Hoon Han, Dae-Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim
Publikováno v:
Nanoscale Advances. 5:1316-1322
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO2 into the gate stack of the TFT.
Autor:
Yeonhwa Kim, Rafael Jumar Chu, Geunhwan Ryu, Seungwan Woo, Quang Nhat Dang Lung, Dae-Hwan Ahn, Jae-Hoon Han, Won Jun Choi, Daehwan Jung
Publikováno v:
ACS Applied Materials & Interfaces. 14:45051-45058
We report on the photoluminescence enhancement of 1.3 μm InAs quantum dots (QDs) epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs buffer thickness from 1000 to 250 nm was found to not only increase the coal
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Dae-Hwan Ahn, Suman Hu, Kyeol Ko, Donghee Park, Hoyoung Suh, Gyu-Tae Kim, Jae-Hoon Han, Jin-Dong Song, YeonJoo Jeong
Publikováno v:
ACS applied materialsinterfaces. 14(21)
A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong
Autor:
Jong-Won Song, Dae-Hwan Ahn
Publikováno v:
Journal of Computational Chemistry. 42:505-515
Time-dependent (TD) density functional theory (DFT) and Franck-Condon Hertzberg-Teller (FCHT) calculations of various DFT functionals [B3LYP, CAM-B3LYP, ωB97XD, and optimally tuned (OT) long-range corrected (LC)-BLYP] were performed to examine how w
Publikováno v:
Journal of Computational Chemistry. 41:1261-1270
The interaction of a carbon nanotube (CNT) with various aromatic molecules, such as aniline, benzophenone, and diphenylamine, was studied using density functional theory able to compute intermolecular weak interactions (B3LYP-D3). CNTs of varying len
Autor:
Dae Hwan Ahn, Do Kyung Hwang, Ji Hoon Kang, Seongil Im, Jong Bae Park, Jin Dong Song, Jongtae Ahn, Hyun Tae Choi, Yeonjin Yi, Il Ho Ahn, Daeyeon Kim, Minju Kim, Min-Chul Park, Soohyung Park, Jihoon Kyhm
Publikováno v:
ACS Applied Materials & Interfaces. 12:10858-10866
Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applicatio...