Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dae‐Choul Choi"'
Autor:
Jeong‐Hyeon Kim, Hye Jin Lee, Hee‐Jin Kim, Jongyun Choi, Jae‐Hyeok Oh, Dae‐Choul Choi, Jisu Byun, Seung‐Eon Ahn, Sung‐Nam Lee
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract A pioneering integration of oxide semiconductor memristors with optoelectronic features is presented, surpassing binary limitations to realize multi‐valued synaptic operations. Through Pt/Ga2O3/Pt memristors, their structural and electroni
Externí odkaz:
https://doaj.org/article/4855340336a548d79ef1f217393125f3
Publikováno v:
Materials, Vol 17, Iss 11, p 2700 (2024)
We investigated a flat-type p*-p LED composed of a p*-electrode with a local breakdown conductive channel (LBCC) formed in the p-type electrode region by applying reverse bias. By locally connecting the p*-electrode to the n-type layer via an LBCC, a
Externí odkaz:
https://doaj.org/article/d8e73aed0d8b4929904c61b1cefee1e3
Publikováno v:
Photonics, Vol 11, Iss 2, p 135 (2024)
We investigated the efficiency droop phenomenon in blue and green GaN-based light-emitting diodes (LEDs) and laser diodes (LDs), which poses a significant challenge in high-power LEDs and is characterized by a reduction in external quantum efficiency
Externí odkaz:
https://doaj.org/article/50cf63fe17944d0fa78642d34af8ceaf
Publikováno v:
Photonics, Vol 10, Iss 10, p 1103 (2023)
This paper investigates the intriguing impact of surface V-shaped defects on the electrical and optical characteristics of GaN-based LEDs, particularly under reverse bias conditions. These defects introduce unique luminescence phenomena, notably gian
Externí odkaz:
https://doaj.org/article/ab081c39d4d945989612dc0195446fd0