Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Dachuan Jiang"'
Publikováno v:
Materials & Design, Vol 214, Iss , Pp 110384- (2022)
Groove, as a special structure at the front of solid–liquid (S/L) interface, takes a great influence on the distribution of impurities for silicon. In this work, the interaction between grooves and impurities was studied, and the evolution model of
Externí odkaz:
https://doaj.org/article/add809f636a7499497451cb8ff03658b
Autor:
Hui Zheng, Cuidan Li, Xiuyu Zheng, Hu-Dachuan Jiang, Yuqing Li, Aihua Yao, Xiaolong Li, Feiyu Wang, Wenqing Liu, Xiang Cao, Runjie Qi, Li Chen, Lairun Jin, Fengcai Zhu, Jingxin Li, Fei Chen
Publikováno v:
Frontiers in Immunology, Vol 15 (2024)
BackgroundHeterologous booster vaccines are more effective than homologous booster vaccines in combating the coronavirus disease 2019 (COVID-19) outbreak. However, our understanding of homologous and heterologous booster vaccines for COVID-19 remains
Externí odkaz:
https://doaj.org/article/2d1ed8ebc30c495f89ca5f1d05f2b58e
Publikováno v:
Emerging Microbes and Infections, Vol 11, Iss 1, Pp 1751-1753 (2022)
Externí odkaz:
https://doaj.org/article/1721f4d10fe045309ab9b91caf88a204
Publikováno v:
Infectious Diseases & Immunity, Vol 1, Iss 1, Pp 43-51 (2021)
Abstract. The coronavirus disease 2019 (COVID-19) pandemic caused by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) continues to scale up around the world, costing severe health and economic losses. The development of an effective COVID
Externí odkaz:
https://doaj.org/article/24fa919015e7418d8374d4e28af45864
Publikováno v:
Journal of Electronic Materials. 49:2429-2435
High-performance p-type silicon target materials of Co-doped B and Al elements were produced using Ga and P contaminated upgraded metallurgical-grade silicon (UMG-Si) at the industrial scale. The purity of silicon ingots is above 5.5 N after the dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f4fd8799f0b729cfc0925c507200ca
https://doi.org/10.1007/s11664-020-07942-0
https://doi.org/10.1007/s11664-020-07942-0
Autor:
Shuang Shi, Pengting Li, Wang Dengke, Shutao Wen, Yi Tan, Dachuan Jiang, H.M. Noor ul Huda Khan Asghar, Zhilin Sheng
Publikováno v:
Energy. 185:102-110
Electron beam melting technology can remove volatile impurities from silicon very effectively. However, the strong cooling capacity of water-cooled copper crucible brings high energy consumption, which confines the wide application of this technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d277d3a4f46f75c50be33d187c30a8d7
https://doi.org/10.1016/j.energy.2019.07.038
https://doi.org/10.1016/j.energy.2019.07.038
Autor:
Dachuan Jiang, Pengting Li, Yi Tan, Jiayan Li, H.M. Noor ul Huda Khan Asghar, Shuang Shi, Wang Weiyi, Yue Yang
Publikováno v:
Vacuum. 166:191-195
Arsenic is one of the main impurity elements in silicon. Electron beam melting (EBM) is considered an effective method for the purification of silicon. The removal of arsenic from silicon is performed by electron beam solidification furnace in this p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cab6800f2d9c7443f4904bd2d093380e
https://doi.org/10.1016/j.vacuum.2019.05.006
https://doi.org/10.1016/j.vacuum.2019.05.006
Autor:
H.M. Noor ul Huda Khan Asghar, Wang Feng, Jiayan Li, Lei Zhang, Yi Tan, Pengting Li, Xu Li, Shuang Shi, Dachuan Jiang, Jinxiang Yang
Publikováno v:
Materials Science in Semiconductor Processing. 96:53-58
A kinetics model for silicon evaporation is established in order to investigate the dependence of temperature and chamber pressure on silicon loss. The results show that the rate-limiting step is mass transfer of silicon in gas phase at low temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd394c668ccda7cd09bee95cf7c89d96
https://doi.org/10.1016/j.mssp.2019.02.015
https://doi.org/10.1016/j.mssp.2019.02.015
Autor:
Peng Wang, Zaheer Abbas Gilani, Adnan Ali, Dachuan Jiang, Muhammad Shahzad Shifa, Yi Tan, Khalid Mahmood, Shiqiang Qin Shuang Shi, Jalil ur Rehman, H.M. Noor ul Huda Khan Asghar, Muhammad Nuaman Usmani
Publikováno v:
International Journal of Materials Research. 110:476-480
Electron beam melting was utilized to investigate the behavior of carbon flow by melting 100 g of multi-crystalline silicon in an electron beam furnace for five minutes. Carbon and nitrogen are the constituent impurities in contaminated Si samples wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb1369357884adea9c8606638c49536
https://doi.org/10.3139/146.111736
https://doi.org/10.3139/146.111736
Autor:
Pengting Li, Shiqiang Qin, Dachuan Jiang, An Guangye, Shuang Shi, H.M. Noor ul Huda Khan Asghar, Guo Xiaoliang, Jianxiong Meng, Yi Tan
Publikováno v:
Separation and Purification Technology. 215:242-248
Removal of boron from silicon is a tough task by traditional directional solidification and vacuum refining techniques, due to its large and inappropriate segregation coefficient and low saturated vapor pressure. At high temperature boron react with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455569d455cd0c2fc93b9bda0ea0ee73
https://doi.org/10.1016/j.seppur.2018.12.080
https://doi.org/10.1016/j.seppur.2018.12.080