Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Da, Lan"'
Autor:
Da Lan, Bingqing Yao, M. J. Swamynadhan, Ning Li, Jing Cao, Shu Shi, Xiaojiang Yu, Ping Yang, Xiaohan Wu, Chao Liu, Pingfan Chen, Jingsheng Chen, Saurabh Ghosh, Qian He
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 19, Pp n/a-n/a (2024)
Abstract Complex oxide heterointerfaces provide a spacious arena for creating emergent phenomena that are unattainable in the constituent bulk counterparts. Herein, The BaTiO3/La1‐xSrxMnO3 [BTO/LSMO (x)] superlattice (SL) as a model system to inves
Externí odkaz:
https://doaj.org/article/cc8004b811984c26988973149da3ad41
Autor:
Shu Shi, Haolong Xi, Tengfei Cao, Weinan Lin, Zhongran Liu, Jiangzhen Niu, Da Lan, Chenghang Zhou, Jing Cao, Hanxin Su, Tieyang Zhao, Ping Yang, Yao Zhu, Xiaobing Yan, Evgeny Y. Tsymbal, He Tian, Jingsheng Chen
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Ferroelectric hafnia-based thin films are promising for applications in memories and neuromorphic devices due to their robust ferroelectricity at reduced dimensions. Here, the authors demonstrate stabilization of the metastable orthorhombic phase in
Externí odkaz:
https://doaj.org/article/3369e725c3484acab0004b27569186df
Autor:
Liang Liu, Chenghang Zhou, Tieyang Zhao, Bingqing Yao, Jing Zhou, Xinyu Shu, Shaohai Chen, Shu Shi, Shibo Xi, Da Lan, Weinan Lin, Qidong Xie, Lizhu Ren, Zhaoyang Luo, Chao Sun, Ping Yang, Er-Jia Guo, Zhili Dong, Aurelien Manchon, Jingsheng Chen
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
One challenge for spin-based electronics is the controlled and reliable switching of magnetization without magnetic fields. Here, Liu et al investigate a variety of compositions of CoPt, and determine the specific composition to maximize switching pe
Externí odkaz:
https://doaj.org/article/3ce5a58afa9040d0ad6204ee0885233e
Autor:
Lili Qu, Da Lan, Kexuan Zhang, Enda Hua, Binghui Ge, Liqiang Xu, Feng Jin, Guanyin Gao, Lingfei Wang, Wenbin Wu
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075001-075001-7 (2021)
Effective control of magnetic anisotropy is important for developing spintronic devices. In this work, we performed a case study of stacking periods (N)-mediated reorientation of lateral magnetic anisotropy in ultrathin La0.67Ca0.33MnO3/SrRuO3 superl
Externí odkaz:
https://doaj.org/article/93a43356b4dd40d6a93f635154c37863
Publikováno v:
Guoji Yanke Zazhi, Vol 18, Iss 7, Pp 1219-1222 (2018)
China has a large number of Hepatitis B virus carriers. Though hematogenous dissemination is the main transmission route, much remains unknown about the way the virus spreads. It is doubted that people may get the disease through various body fluids
Externí odkaz:
https://doaj.org/article/b77b86d124b948b982c08fc988e80872
Publikováno v:
Journal of Mountain Science. 19:3548-3567
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c3a6a8be74c076310d050e32ca8cec
https://doi.org/10.1007/s11629-022-7448-9
https://doi.org/10.1007/s11629-022-7448-9
Publikováno v:
Journal of Mountain Science. 19:2634-2650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feac0527eb20fb0b9bb92a10fdec33e1
https://doi.org/10.1007/s11629-021-7185-5
https://doi.org/10.1007/s11629-021-7185-5
Autor:
Da Lan, Binbin Chen, Lili Qu, Kexuan Zhang, Liqiang Xu, Feng Jin, Zhuang Guo, Feng Chen, Guanyin Gao, Wenbin Wu
Publikováno v:
APL Materials, Vol 7, Iss 3, Pp 031119-031119-8 (2019)
Synthetic antiferromagnets (S-AFMs) composed of strongly correlated oxides have recently been demonstrated to show potential applications in spintronic devices. However, the tunability for the interlayer exchange coupling (IEC) in these all-oxide S-A
Externí odkaz:
https://doaj.org/article/e6808e48f3314affa449a960350ff0b8
Autor:
Jing Cao, Xian Yi Tan, Ning Jia, Da Lan, Samantha Faye Duran Solco, Kewei Chen, Sheau Wei Chien, Hongfei Liu, Chee Kiang Ivan Tan, Qiang Zhu, Jianwei Xu, Qingyu Yan, Ady Suwardi
Publikováno v:
Nanoscale. 14:410-418
Doping high electrical conductivity Nb5Ge3 precipitates into GeTe results in nanoprecipitates phonon scattering, while retaining electrical mobility. As a result, thermoelectric zT of GeTe is drastically enhanced to 2.0 at 723 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d18fe83694bfbe3359d486f03858b19
https://doi.org/10.1039/d1nr06962d
https://doi.org/10.1039/d1nr06962d
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.