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Publikováno v:
Acta Physica Sinica. 61:050702
The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6982c762954e7137cf03fad24ef53ccd
https://doi.org/10.7498/aps.61.050702
https://doi.org/10.7498/aps.61.050702
