Zobrazeno 1 - 10
of 102
pro vyhledávání: '"DOĞAN, PINAR"'
Autor:
Doğan, Pınar, Karakul, Atiye, Akgül, Esra Ardahan, Öztornaci, Beste Özgüven, Sarı, Hatice Yıldırım
Publikováno v:
In Enfermería Clínica (English Edition) September-October 2022 32(5):306-315
Autor:
Doğan, Pınar, Şendir, Merdiye
Publikováno v:
In Thinking Skills and Creativity September 2022 45
Autor:
Pfüller, Carsten, Corfdir, Pierre, Hauswald, Christian, Flissikowski, Timur, Kong, Xiang, Zettler, Johannes K., Fernández-Garrido, Sergio, Doğan, Pınar, Grahn, Holger T., Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Phys. Rev. B 94, 155308 (2016)
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temp
Externí odkaz:
http://arxiv.org/abs/1607.04036
Autor:
Ardahan Akgül, Esra *, Karakul, Atiye, Altın, Asiye, Doğan, Pınar, Hoşgör, Münevver, Oral, Akgün
Publikováno v:
In Complementary Therapies in Medicine August 2021 60
Autor:
Doğan, Pınar
Publikováno v:
In Journal of Behavioral and Experimental Economics February 2020 84
Akademický článek
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Autor:
Lähnemann, Jonas, Jahn, Uwe, Brandt, Oliver, Flissikowski, Timur, Dogan, Pinar, Grahn, Holger T.
Publikováno v:
J. Physics D: Appl. Phys. 47, 423001 (2014)
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the
Externí odkaz:
http://arxiv.org/abs/1405.1261
Autor:
Jenichen, Bernd, Brandt, Oliver, Pfueller, Carsten, Dogan, Pinar, Knelangen, Mathias, Trampert, Achim
Publikováno v:
Nanotechnology 22 (2011) 295714 (5pp)
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. How
Externí odkaz:
http://arxiv.org/abs/1206.2525
Autor:
Lähnemann, Jonas, Brandt, Oliver, Jahn, Uwe, Pfüller, Carsten, Roder, Claudia, Dogan, Pinar, Grosse, Frank, Belabbes, Abderrezak, Bechstedt, Friedhelm, Trampert, Achim, Geelhaar, Lutz
Publikováno v:
Physical Review B 86, 081302(R) (2012)
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence a
Externí odkaz:
http://arxiv.org/abs/1201.4294
Autor:
Bourreau, Marc, Doğan, Pınar
Publikováno v:
In Journal of Economic Behavior and Organization May 2018 149:106-122