Zobrazeno 1 - 10
of 482
pro vyhledávání: '"DI BARTOLOMEO, Antonio"'
Autor:
Sleziona, Stephan, Pelella, Aniello, Faella, Enver, Kharsah, Osamah, Skopinski, Lucia, Maas, Andre, Liebsch, Yossarian, Di Bartolomeo, Antonio, Schleberger, Marika
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or
Externí odkaz:
http://arxiv.org/abs/2306.04493
Autor:
Anter, Aslıhan, Ulusoy, Murat, Polat, Barış, Yıldız, Mustafa, Di Bartolomeo, Antonio, Bi, Jinshun, Orhan, Elif
Publikováno v:
In FlatChem January 2025 49
Autor:
Grillo, Alessandro, Pelella, Aniello, Faella, Enver, Giubileo, Filippo, Sleziona, Stephan, Kharsah, Osamah, Schleberger, Marika, Di Bartolomeo, Antonio
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-
Externí odkaz:
http://arxiv.org/abs/2110.08148
Autor:
Berktaş, Zeynep, Anter, Aslıhan, Dikicioğlu, Elanur, Ulusoy, Murat, Candan, Can, Yıldız, Mustafa, Di Bartolomeo, Antonio, Orhan, Elif
Publikováno v:
In Surfaces and Interfaces August 2024 51
Autor:
Grillo, Alessandro, Faella, Enver, Pelella, Aniello, Giubileo, Filippo, Ansari, Lida, Gity, Farzan, Hurley, Paul K., McEvoy, Niall, Di Bartolomeo, Antonio
Publikováno v:
Adv. Funct. Mater. 2021, 2105722
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that posi
Externí odkaz:
http://arxiv.org/abs/2107.09492
Autor:
Viscardi, Loredana, Durante, Ofelia, De Stefano, Sebastiano, Intonti, Kimberly, Kumar, Arun, Pelella, Aniello, Giubileo, Filippo, Kharsah, Osamah, Daniel, Leon, Sleziona, Stephan, Schleberger, Marika, Di Bartolomeo, Antonio
Publikováno v:
In Surfaces and Interfaces June 2024 49
Autor:
Viscardi, Loredana, Faella, Enver, Intonti, Kimberly, Giubileo, Filippo, Demontis, Valeria, Prete, Domenic, Zannier, Valentina, Sorba, Lucia, Rossella, Francesco, Di Bartolomeo, Antonio
Publikováno v:
In Materials Science in Semiconductor Processing April 2024 173
Autor:
Pelella, Aniello, Grillo, Alessandro, Faella, Enver, Luongo, Giuseppe, Askari, Mohammad Bagher, Di Bartolomeo, Antonio
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this wor
Externí odkaz:
http://arxiv.org/abs/2105.09655
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of
Externí odkaz:
http://arxiv.org/abs/2012.07080
Autor:
Pelella, Aniello, Grillo, Alessandro, Urban, Francesca, Giubileo, Filippo, Passacantando, Maurizio, Pollmann, Erik, Sleziona, Stephan, Schleberger, Marika, Di Bartolomeo, Antonio
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good m
Externí odkaz:
http://arxiv.org/abs/2008.09910