Zobrazeno 1 - 10
of 731
pro vyhledávání: '"DENIS FLANDRE"'
Autor:
Nicolas Roisin, Guillaume Brunin, Gian-Marco Rignanese, Denis Flandre, Jean-Pierre Raskin, Samuel Poncé
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-11 (2024)
Abstract Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mo
Externí odkaz:
https://doaj.org/article/7ada9c1c34df4749a2097875649d6011
Autor:
Fatemeh Qaderi, Teodor Rosca, Maurizio Burla, Juerg Leuthold, Denis Flandre, Adrian M. Ionescu
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-12 (2023)
Abstract In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of i
Externí odkaz:
https://doaj.org/article/ff4f3354cf1840069f0c4f67055a5a09
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Publikováno v:
IEEE Access, Vol 10, Pp 29482-29492 (2022)
This paper presents an optimization methodology for inductorless noise-cancelling CMOS Low-Noise Amplifiers (LNA), whose performance typically depends on a tight balance in the design of two transistor stages. Due to the different functions of the tw
Externí odkaz:
https://doaj.org/article/8f3aa16816f044daadaad7248e75f6d0
Autor:
Aryan Afzalian, Denis Flandre
Publikováno v:
Sensors, Vol 23, Iss 12, p 5405 (2023)
In this study, we use NEGF quantum transport simulations to study the fundamental detection limit of ultra-scaled Si nanowire FET (NWT) biosensors. A N-doped NWT is found to be more sensitive for negatively charged analytes as explained by the nature
Externí odkaz:
https://doaj.org/article/2d08a43c5211418fa3aedb4499dee570
Autor:
Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder, Jean-Pierre Raskin, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t
Externí odkaz:
https://doaj.org/article/cdb66ae5dc3c41f7ad244224734162ac
Autor:
Egon Henrique Salerno Galembeck, Christian Renaux, Jacobus Willibrordus Swart, Denis Flandre, Salvador Pinillos Gimenez
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 415-423 (2021)
This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate
Externí odkaz:
https://doaj.org/article/2efd1a02b6ae446b94c6da10ec110ef5
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Denis Flandre, Valeriya Kilchytska, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 646-654 (2020)
This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as par
Externí odkaz:
https://doaj.org/article/604d5dc80ab54f939d62a7e5ef122832
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed t
Externí odkaz:
https://doaj.org/article/0272cd05220a4e07b332e6db4491c173
Autor:
Sinda Kaziz, Mohamed Hadj Said, Antonino Imburgia, Bilel Maamer, Denis Flandre, Pietro Romano, Fares Tounsi
Publikováno v:
Energies, Vol 16, Iss 4, p 1978 (2023)
One of the most common failures or breakdowns that can occur in high-voltage (HV) equipment is due to partial discharges (PDs). This occurs as a result of inadequate insulation, aging, harsh environmental effects, or manufacturing flaws. PD detection
Externí odkaz:
https://doaj.org/article/97afa66c2ef14ba18b66adf57827b052