A low-power high storage capacity structure for GaAs MESFET ROM

Autor: A. Guyot, B. Hochet, R. Kanan, M. Declercq

Publikováno v: Proceedings.-International-Workshop-on-Memory-Technology,-Design-and-Testing-Cat.-No.97TB100159.
Proceedings.-International-Workshop-on-Memory-Technology,-Design-and-Testing-Cat.-No.97TB100159., 1997, San Jose, CA, United States. pp.58-63, ⟨10.1109/MTDT.1997.619396⟩

ISBN: 0818680997; Gallium Arsenide (GaAs) is used in the design of high speed systems; however, it is difficult or impossible to realize high-capacity ROMs, because of subthreshold currents and an unacceptable power dissipation. This paper describes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de6dc4b230bc4865cbaebc990a83524c
https://hal.archives-ouvertes.fr/hal-00014721