Zobrazeno 1 - 10
of 204
pro vyhledávání: '"DAS, SARTHAK"'
Autor:
Venkatakrishnarao, Dasari, Mishra, Abhishek, Tarn, Yaoju, Bosman, Michel, Lee, Rainer, Das, Sarthak, Mukherjee, Subhrajit, Talha-Dean, Teymour, Zhang, Yiyu, Teo, Siew Lang, Chai, Jian Wei, Bussolotti, Fabio, Goh, Kuan Eng Johnson, Lau, Chit Siong
Publikováno v:
ACS Nano, 2024
Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth.
Externí odkaz:
http://arxiv.org/abs/2409.12485
Autor:
Mukherjee, Subhrajit, Wang, Shuhua, Venkatakrishnarao, Dasari, Tarn, Yaoju, Talha-Dean, Teymour, Lee, Rainer, Verzhbitskiy, Ivan A., Huang, Ding, Mishra, Abhishek, John, John Wellington, Das, Sarthak, Bussoloti, Fabio, Maddumapatabandi, Thathsara D., Teh, Yee Wen, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still l
Externí odkaz:
http://arxiv.org/abs/2409.08453
Autor:
Das, Sarthak, Huang, Ding, Verzhbitskiy, Ivan, Ooi, Zi-En, Lau, Chit Siong, Lee, Rainer, Wong, Calvin Pei Yu, Goh, Kuan Eng Johnson
Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additio
Externí odkaz:
http://arxiv.org/abs/2404.09904
Autor:
Lau, Chit Siong, Das, Sarthak, Verzhbitskiy, Ivan A., Huang, Ding, Zhang, Yiyu, Talha-Dean, Teymour, Fu, Wei, Venkatakrishnarao, Dasari, Goh, Kuan Eng Johnson
Publikováno v:
ACS Nano, 17 (11), 9870-9905 (2023)
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques
Externí odkaz:
http://arxiv.org/abs/2402.02707
Autor:
Talha-Dean, Teymour, Tarn, Yaoju, Mukherjee, Subhrajit, John, John Wellington, Huang, Ding, Verzhbitskiy, Ivan A., Venkatakrishnarao, Dasari, Das, Sarthak, Lee, Rainer, Mishra, Abhishek, Wang, Shuhua, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist
Externí odkaz:
http://arxiv.org/abs/2402.01185
Autor:
Chatterjee, Suman, Dandu, Medha, Dasika, Pushkar, Biswas, Rabindra, Das, Sarthak, Watanabe, Kenji, Taniguchi, Takashi, Raghunathan, Varun, Majumdar, Kausik
Publikováno v:
Nature Communications, 14, 4679, 2023
Excitonic states trapped in harmonic moir\'e wells of twisted heterobilayers is an intriguing testbed. However, the moir\'e potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic
Externí odkaz:
http://arxiv.org/abs/2307.12880
Autor:
Zhang, Yiyu, Venkatakrishnarao, Dasari, Bosman, Michel, Fu, Wei, Das, Sarthak, Bussolotti, Fabio, Lee, Rainer, Teo, Siew Lang, Huang, Ding, Verzhbitskiy, Ivan, Jiang, Zhuojun, Jiang, Zhuoling, Chai, Jian Wei, Tong, Shi Wun, Ooi, Zi-En, Wong, Calvin Pei Yu, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielect
Externí odkaz:
http://arxiv.org/abs/2210.14426
Autor:
Das, Sarthak, Gupta, Garima, Chatterjee, Suman, Watanabe, Kenji, Taniguchi, Takashi, Majumdar, Kausik
Strong Coulomb interaction in monolayer semiconductors allows them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonanc
Externí odkaz:
http://arxiv.org/abs/2205.10303
Autor:
Chatterjee, Suman, Gupta, Garima, Das, Sarthak, Watanabe, Kenji, Taniguchi, Takashi, Majumdar, Kausik
Publikováno v:
Phys. Rev. B 105, L121409, 2022
Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body effects like exciton-exciton annihilation (EEA) have been widely explored in this material syste
Externí odkaz:
http://arxiv.org/abs/2204.01025
Autor:
Chatterjee, Suman, Das, Sarthak, Gupta, Garima, Watanabe, Kenji, Taniguchi, Takashi, Majumdar, Kausik
Publikováno v:
2D Materials, 9, 015023, 2022
The monolayers of semiconducting transition metal dichalcogenides host strongly bound excitonic complexes and are an excellent platform for exploring many-body physics. Here we demonstrate a controlled kinetic manipulation of the five-particle excito
Externí odkaz:
http://arxiv.org/abs/2204.00939