Zobrazeno 1 - 10
of 333
pro vyhledávání: '"DAS, BIKASH"'
Autor:
Karmakar, Bipul, Das, Bikash, Mandal, Shibnath, Paramanik, Rahul, Maity, Sujan, Kundu, Tanima, Das, Soumik, Palit, Mainak, Dey, Koushik, Dolui, Kapildeb, Datta, Subhadeep
We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential pathway t
Externí odkaz:
http://arxiv.org/abs/2412.09291
Autor:
Maity, Sujan, Das, Soumik, Palit, Mainak, Dey, Koushik, Das, Bikash, Kundu, Tanima, Paramanik, Rahul, De, Binoy Krishna, Kunwar, Hemant Singh, Datta, Subhadeep
Electron-magnon coupling reveals key insights into the interfacial properties between non-magnetic metals and magnetic insulators, influencing charge transport and spin dynamics. Here, we present temperature-dependent Raman spectroscopy and magneto-t
Externí odkaz:
http://arxiv.org/abs/2411.08597
Orbital angular momentum (OAM) light beams for high-order harmonic generation (HHG) provide an additional degree of freedom to study the light-matter interaction at ultrafast timescales. A more sophisticated configuration is a perfect optical vortex
Externí odkaz:
http://arxiv.org/abs/2409.19591
Autor:
Paramanik, Rahul, Kundu, Tanima, Das, Soumik, Barinov, Alexey, Das, Bikash, Maity, Sujan, Palit, Mainak, Mahatha, Sanjoy Kr, Datta, Subhadeep
Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such
Externí odkaz:
http://arxiv.org/abs/2405.14817
We investigate the interference of high-order perfect optical vortex (POV) beams with different topological charges. Through numerical simulations, we reveal a remarkable phenomenon: keeping the beam width, and beam radius fixed while changing the to
Externí odkaz:
http://arxiv.org/abs/2404.13549
Autor:
Dey, Koushik, Das, Bikash, Hazra, Pabitra Kumar, Kundu, Tanima, Naskar, Sanjib, Das, Soumik, Maity, Sujan, Maji, Poulomi, Karmakar, Bipul, Paramanik, Rahul, Datta, Subhadeep
The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelec
Externí odkaz:
http://arxiv.org/abs/2403.11658
Autor:
Mahato, P. C., Saha, Suprotim, Das, Bikash, Datta, Subhadeep, Mondal, Rajib, Mal, Sourav, Garg, Ashish, Sen, Prasenjit, Banerjee, S. S.
Publikováno v:
Physical Review B 109, 165405 (2024)
We investigate thickness-dependent transformation from a paramagnetic to ferromagnetic phase in Cr$_{2}$Ge$_{2}$Te$_{6}$ (CGT) in bulk and few-layer flake forms. 2D Ising-like critical transition in bulk CGT occurs at $T_{c}$ = 67 K with out-of-plane
Externí odkaz:
http://arxiv.org/abs/2402.09741
Autor:
Das, Bikash, Ghosh, Subrata, Sengupta, Shamashis, Auban-Senzier, Pascale, Monteverde, Miguel, Dalui, Tamal Kumar, Kundu, Tanima, Saha, Rafikul Ali, Maity, Sujan, Paramanik, Rahul, Ghosh, Anudeepa, Palit, Mainak, Bhattacharjee, Jayanta K, Mondal, Rajib, Datta, Subhadeep
Manipulation of long-range order in two-dimensional (2D) van der Waals (vdW) magnetic materials (e.g., CrI$_3$, CrSiTe$_3$ etc.), exfoliated in few-atomic layer, can be achieved via application of electric field, mechanical-constraint, interface engi
Externí odkaz:
http://arxiv.org/abs/2303.06732
Autor:
Mallick, Bidyut, Palit, Mainak, Jana, Rajkumar, Das, Soumik, Ghosh, Anudeepa, Sunil, Janaky, Maity, Sujan, Das, Bikash, Kundu, Tanima, Narayana, Chandrabhas, Datta, Ayan, Datta, Subhadeep
In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott transition. Here, we investigate room-temperature layer-dependent insula
Externí odkaz:
http://arxiv.org/abs/2303.01204
Autor:
Kundu, Tanima, Pal, Barnik, Das, Bikash, Paramanik, Rahul, Maity, Sujan, Ghosh, Anudeepa, Palit, Mainak, Kopciuszynski, Marek, Barinov, Alexei, Mahatha, Sanjoy Kr, Datta, Subhadeep
Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchanne
Externí odkaz:
http://arxiv.org/abs/2302.06491