Zobrazeno 1 - 10
of 42
pro vyhledávání: '"DANIL'TSEV, V. M."'
Autor:
Minkov, G. M., Germanenko, A. V., Rut, O. E., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
Publikováno v:
Phys.Rev.B 62, 17089 (2000)
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature dependencies of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0003168
Autor:
Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and
Externí odkaz:
http://arxiv.org/abs/cond-mat/9912431
Autor:
Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance (MR) in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of the closed
Externí odkaz:
http://arxiv.org/abs/cond-mat/9904336
Autor:
Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
There was shown that Fourier transform of the negative magnetoresistance (NMR) which is due to interference correction to the conductivity contains the information about the area distribution function of the closed paths and about area dependence of
Externí odkaz:
http://arxiv.org/abs/cond-mat/9902038
Autor:
Danil'tsev, V. M.1,2 lmd@ipm.sci-nnov.ru, Drozdov, M. N.1,2, Moldavskaya, L. D.1,2, Shashkin, V. I.1,2, Germanenko, A. V.1,2, Min'ko, G. M.1,2, Sherstobitov, A. A.1,2
Publikováno v:
Technical Physics Letters. Sep2004, Vol. 30 Issue 9, p795-798. 4p.
Publikováno v:
Technical Physics Letters. Feb2001, Vol. 27 Issue 2, p114. 4p.
Publikováno v:
Semiconductors. Jun98, Vol. 32 Issue 6, p659. 6p.
Akademický článek
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Autor:
Drozdov, M. N.1, Danil'tsev, V. M.1, Moldavskaya, L. D.1 lmd@ipm.sci-nnov.ru, Shashkin, V. I.1
Publikováno v:
Technical Physics Letters. Jan2008, Vol. 34 Issue 1, p1-3. 3p. 2 Graphs.
Publikováno v:
Technical Physics Letters. Oct2001, Vol. 27 Issue 10, p868. 3p.