Zobrazeno 1 - 4
of 4
pro vyhledávání: '"DA Ashenford"'
Autor:
DA Ashenford, B. Lunn, CT Chou, M.‐J. Casanove, John L. Hutchison, David Cherns, John W Steeds, Roger Vincent
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 1993, 74 (11), pp.6566-6570. ⟨10.1063/1.355118⟩
Journal of Applied Physics, American Institute of Physics, 1993, 74 (11), pp.6566-6570. ⟨10.1063/1.355118⟩
Journal of Applied Physics, 1993, 74 (11), pp.6566-6570. ⟨10.1063/1.355118⟩
Journal of Applied Physics, American Institute of Physics, 1993, 74 (11), pp.6566-6570. ⟨10.1063/1.355118⟩
A Ga2Te3 interfacial phase has been observed in a ZnTe/(001)GaSb heterostructure by high resolution electron microscopy under special imaging conditions. This phase exists in domains 5–10 nm in size on the ZnTe side of, and usually 2–4 nm away fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20a5eca92b2cee3824b80c6aceaabe4f
https://doi.org/10.1063/1.355118
https://doi.org/10.1063/1.355118
Publikováno v:
Philosophical Magazine Letters. 67:323-330
Misfit dislocations in Cd1−x MnxTe/CdTe(001) epitaxial structures with low mismatch (0·3%) are compared for cases where the deposit is in tension and in compression. Where the deposit was in tension, misfit dislocations were parallel to interfacia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851e691f785f11c3541dd482e7221ec3
https://doi.org/10.1080/09500839308241269
https://doi.org/10.1080/09500839308241269
Autor:
Marie-José Casanove, CT Chou, DA Ashenford, John W Steeds, B. Lunn, John L. Hutchison, David Cherns
Publikováno v:
Ultramicroscopy
Ultramicroscopy, Elsevier, 1994, 53 (1), pp.91-96. ⟨10.1016/0304-3991(94)90107-4⟩
Ultramicroscopy, 1994, 53 (1), pp.91-96. ⟨10.1016/0304-3991(94)90107-4⟩
Ultramicroscopy, Elsevier, 1994, 53 (1), pp.91-96. ⟨10.1016/0304-3991(94)90107-4⟩
Ultramicroscopy, 1994, 53 (1), pp.91-96. ⟨10.1016/0304-3991(94)90107-4⟩
The new phase Ga 2 Te 3 has been found as an interfacial layer between MBE-grown ZnTe and a (100) GaSb substrate. We describe here a novel approach to HREM structure imaging of its superlattice. This is based on a careful analysis of the behaviour of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4dac707ff499e700c7a1c5456e6314a
https://hal.archives-ouvertes.fr/hal-02918325
https://hal.archives-ouvertes.fr/hal-02918325
Publikováno v:
MRS Proceedings. 161
CdTe/Cd1−xMnx Te superlattices with well/barrier thicknesses ranging from 20Å to 300Å were examined via plan and cross section TEM in analytical instruments capable of EDX and CL. Misfit dislocations, inclined dislocations and stacking faults wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c232ff1be3e36d1832c73bb128bf194
https://doi.org/10.1557/proc-161-437
https://doi.org/10.1557/proc-161-437