Zobrazeno 1 - 10
of 549
pro vyhledávání: '"D.Z. Shen"'
Autor:
Guo-Zhong He, D.Z. Shen, Ying-Jie Lu, Hong-lie Shen, Hui-Qiong Wang, Bo-Tao Li, Jin-Cheng Zheng, Chongxin Shan, H. Zhou
Publikováno v:
Applied Surface Science. 412:554-558
ZnO films with carrier concentration as low as 5.0 × 10 13 cm −3 have been prepared via a lithium and nitrogen codoping method, and ultraviolet photodetectors have been fabricated from the films. The photodetectors can be used to detect weak signa
Autor:
E.A. Alkhazraji, Wenna Du, Jiaorong Fan, M.Z.M. Khan, M.T.A. Khan, Ziling Li, Xiaohang Li, Di Li, Che-Hao Liao, Huiyun Liu, Xinfeng Liu, Y.J. Lu, Yang Mi, T.K. Ng, B.S. Ooi, Songnan Qu, C.X. Shan, D.Z. Shen, Z.F. Shi, Haiding Sun, Mingchu Tang, Zhen Tian, Jiang Wu, Yu Ye, Ding Zhou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95bf4b1b0dbde00a9ebd14d16ee65785
https://doi.org/10.1016/b978-0-12-814162-5.01002-5
https://doi.org/10.1016/b978-0-12-814162-5.01002-5
The urgent requirement of ultraviolet (UV) semiconductor laser with low cost and high performance has motivated intensive research in zinc oxide (ZnO) material because of its wide bandgap of 3.37 eV and large exciton binding energy of 60 meV. Especia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71255b47859e56b1428084df5a5a4e3d
https://doi.org/10.1016/b978-0-12-814162-5.00004-2
https://doi.org/10.1016/b978-0-12-814162-5.00004-2
Publikováno v:
Journal of Luminescence. 156:188-191
Cubic rocksalt structured Mg0.54Zn0.46O films have been prepared, and the films show a wide bandgap of 5.47 eV. Obvious emission at around 276 nm has been detected when the films are placed in the ambient of plasma, and the output power of the plasma
Autor:
Jixue Li, Z.Z. Zhang, Yongfeng Li, Bin Yao, Hongbo Wang, Zhanhui Ding, Ye Xu, Hanhua Zhao, D.Z. Shen, L. Zhang
Publikováno v:
Journal of Alloys and Compounds. 585:479-484
Gold-doped ZnO (ZnO:Au) films were grown on quartz substrates at room temperature by radio frequency magnetron sputtering technique and then annealed in the temperature ranging from 350 to 800 °C in argon ambience. It is found that the Au substitute
Autor:
D.Z. Shen, Hanhua Zhao, L. Zhang, Ye Xu, Bin Yao, Yongfeng Li, Z.Z. Zhang, Zhanhui Ding, Tianye Yang, Hongsu Wang, Jixue Li
Publikováno v:
Ceramics International. 40:2161-2167
The effects of Ag–S codoping on chemical states of Ag doped in ZnO, as well as electrical and optical properties of the ZnO film were investigated by comparative study of undoped ZnO, Ag-doped ZnO (ZnO:Ag) and Ag–S codoped ZnO (ZnO:(Ag, S)) films
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:425-428
MgZnO-based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg0.44Zn0.56O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under rela
Autor:
Ye Xu, Hanhua Zhao, Rui Deng, Yongfeng Li, L. Zhang, Jixue Li, D.Z. Shen, Bo-Tao Li, Bin Yao, Z.Z. Zhang
Publikováno v:
Journal of Luminescence. 134:240-243
The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diod
Autor:
Hanhua Zhao, Z.Z. Zhang, Zhanhui Ding, L. Zhang, Ye Xu, Yongfeng Li, Bin Yao, Tieying Yang, Jixue Li, D.Z. Shen
Publikováno v:
Journal of Alloys and Compounds. 550:479-482
Effects of S on solid solubility of Ag and electrical properties of Ag-doped ZnO films are investigated by experimental and first-principles studies. It is found that S alloying in ZnO can increase solid solubility of Ag substituting for Zn (Ag-Zn) d
Phase diagram and electrical properties of Pb(Yb1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics
Publikováno v:
Materials Research Bulletin. 48:131-136
The ternary ferroelectric ceramics Pb(Yb1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PYN–PMN–PT), in the vicinity of morphotropic phase boundary (MPB) region, have been prepared by a two-step synthetic process. The ternary phase diagram at room tempe