Zobrazeno 1 - 10
of 24
pro vyhledávání: '"D.Y. Mokeev"'
Autor:
D.L. Budnitsky, D.Y. Mokeev, V. A. Novikov, A. V. Tyazhev, G.I. Ayzenshtat, O.B. Koretskaya, O.P. Tolbanov, L.S. Okaevich
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 531:121-124
We present first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer.
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 494:229-232
Calculations of parameters of an ionizing radiation detector on the basis of the transistor heterostructure n(AlGaAs)–p + (GaAs)–n − (GaAs) have been carried out. The parameters of the structure have been optimized to achieve a maximum amplific
Publikováno v:
2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC).
The results of calculations and experimental studies of pulse height distribution, sensitivity and spatial resolution dependences on detector's contact area and electric field profiles in chromium compensated gallium arsenide (GaAs:Cr) radiation sens
Autor:
A. V. Tyazhev, D.Y. Mokeev, A. Zarubin, Michael Fiederle, D.L. Budnitsky, E. Hamann, Alex Fauler, G Shelkov, O.P. Tolbanov, V. A. Novikov, S. Procz
Publikováno v:
MRS Proceedings. 1576
Results of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium cha
Autor:
Petty Bernitt, Andrey Sapronov, Wolfgang Lange, A. V. Tyazhev, Wolfgang Lohmann, V. A. Novikov, M. Ohlerich, S. Schuwalow, O. P. Tolbanov, H. Henschel, M. Bergholz, D.Y. Mokeev, C. Grah, R. Schmidt, A. Ignatenko, M. I. Gostkin, Szymon Kulis, K. Afanaciev, A. Rosca, Z. V. Krumshteyn, G. A. Chelkov, J. Gajewski, R.L. Heller
Publikováno v:
Journal of instrumentation : electronic journal. 2012. Vol. 7, № 11. P. 11022 (1-11)
Journal of Instrumentation 7, 11022 (2012). doi:10.1088/1748-0221/7/11/P11022
JINST, (2012) pp. P11022
Journal of Instrumentation 7, 11022 (2012). doi:10.1088/1748-0221/7/11/P11022
JINST, (2012) pp. P11022
A compact and finely grained sandwich calorimeter is designed to instrument the very forward region of a detector at a future e+e- collider. The calorimeter will be exposed to low energy e+e - pairs originating from beamstrahlung, resulting in absorb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::088a3a8eceb57c124a9530447e4a6300
https://openrepository.ru/article?id=812771
https://openrepository.ru/article?id=812771
Publikováno v:
2011 International Siberian Conference on Control and Communications (SIBCON).
This paper presents the results of experimental investigations of sensitivity and pulse characteristics of detectors based on gallium arsenide compensated with chromium exposure to X-ray band 60–120 keV. A comparison of the sensitivity of detectors
Publikováno v:
2011 International Siberian Conference on Control and Communications (SIBCON).
Results of investigation of quantum count mode gallium arsenide pixel detectors are demonstrated. It was shown that at room temperature energy resolution of GaAs detector similar to silicon ones. But detection quantum efficiency (DQE) of 30 keV gamma
Publikováno v:
2009 International Siberian Conference on Control and Communications.
The paper presents results of experimental and theoretical investigations of 20–140 keV X-ray sensitivity of chromium compensated GaAs detectors.
Publikováno v:
2007 Siberian Conference on Control and Communications.
Experimental research on the possibility of creating a spectrometric detector based on gallium arsenide is provided. A co-planar-grid detector based on GaAs:Cr has spectrometric properties.
Autor:
Mikhail Lelekov, A. Zarubin, Lyudmila Okaevich, A. V. Tyazhev, Ivan Ponomarev, Mikhail Bimatov, D.Y. Mokeev
Publikováno v:
International Workshops and Tutorials on Electron Devices and Materials.
In activity the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown On the basis of the analysis of experimental data is established, that in electrical fields with strength in ran