Zobrazeno 1 - 10
of 103
pro vyhledávání: '"D.W. Ferguson"'
Publikováno v:
Journal of Molecular Spectroscopy. 172:469-484
The rotational-torsional spectrum of DCOOCH3, the symmetric, singly deuterated isotopomer of methyl formate, has been extended into the millimeter-wave and submillimeter-wave regions of the electromagnetic spectrum. A total of 885 lines belonging to
Autor:
R.P. Smith, J.M. Ballingall, Luke F. Lester, D.W. Ferguson, P.M. Smith, A.A. Jabra, P.C. Chao, P. Ho
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
Doped-channel, 0.25- mu m-gate-length, InGaAs pseudomorphic HEMTs (high electron mobility transistors) have been developed which exhibit state-of-the-art power performance at millimeter-wave frequencies, with output power density of 0.93 W/mm and pow
Autor:
A.A. Jabra, P.M. Smith, D.W. Ferguson, Luke F. Lester, P.C. Chao, R.P. Smith, B.R. Lee, K.H.G. Duh, J.M. Ballingall
Publikováno v:
1988., IEEE MTT-S International Microwave Symposium Digest.
The development of InGaAs pseudomorphic high-electron mobility transistors (HEMTs) with state-of-the-art power performance at millimeter-wave frequencies is reported. Results given include maximum power-added efficiencies of 44% at 35 GHz and 36% at
Publikováno v:
MILCOM 92 Conference Record.
The authors investigate the lowest-level building block of the EHF amplifier chain, a 1.5-W amplifier module that can be combined for higher power. Based on pseudomorphic high electron mobility transistor (HEMT) technology, this amplifier incorporate
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
A high-power 0.15 /spl mu/m gate-length pseudomorphic HEMT (PHEMT), developed specifically for high reliability millimeter-wave satellite communication applications, is reported. The device has demonstrated state-of-the-art performance at 44.5 GHz, g
Publikováno v:
1991 IEEE MTT-S International Microwave Symposium Digest.
A pseudomorphic HEMT (high electron mobility transistor) with record output power and high efficiency at 44 GHz has been developed. The 0.15 mu m gate-length, 900 mu m gate-width device generates 500 to 700 mW of output power with power-added efficie
Publikováno v:
1991 IEEE MTT-S International Microwave Symposium Digest.
Double-heterojunction InGaAs pseudomorphic HEMTs (high electron mobility transistors) with a 0.25 mu m gate-length have been integrated into a three-stage power amplifier MMIC (monolithic microwave integrated circuit) designed for the 34-36 GHz band.
Akademický článek
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Akademický článek
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Autor:
J.M. Ballingall, Luke F. Lester, P.M. Smith, R.P. Smith, P. Ho, M.Y. Kao, P.C. Chao, D.W. Ferguson
Publikováno v:
Electronics Letters. 25:639-640
A 0.25 mu m gate-length, 900 mu m gate width doped-channel, pseudomorphic heterostructure FET with high output power and efficiency is reported. At 35 GHz output power is 658 mW with 3.2 dB power gain and 24% power-added efficiency. >