Zobrazeno 1 - 10
of 23
pro vyhledávání: '"D.V. Rossi"'
Publikováno v:
IEEE Transactions on Electron Devices. 38:1182-1192
The two-dimensional electron gas charged-coupled device (2DEG-CCD) structure for III-V and other heterojunction materials is reviewed. Device design considerations for gate, insulator, and channel material parameters are presented. Optimization of 2D
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
A high-performance GaAs charge-coupled device (CCD) structure that has charge transfer efficiency (CTE) greater than 0.999 at 1 GHz is reported. This device is the highest performance capacitive gate GaAs CCD yet reported. A method of improving CTE i
Autor:
George David Pettit, Jerry M Woodall, Eric R. Fossum, D.V. Rossi, Peter D. Kirchner, J.-I. Song
Publikováno v:
IEEE Electron Device Letters. 12:688-690
The first InGaAs/InP charge-coupled device (CCD) is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In/sub 0.53/G
Publikováno v:
IEEE Transactions on Electron Devices. 38:930-932
The fabrication and performance of an Al/sub 0.3/Ga/sub 0.7/As/GaAs modulation-doped resistive-gate charge-coupled device (CCD) are reported. The two-dimensional electron gas (2DEG) CCD, implemented as a 32-stage four-phase delay line, was tested at
Publikováno v:
SPIE Proceedings.
The two-dimensional electron gas charge-coupled device (2DEG-CCD) structure is an outgrowth of recent advances in 2DEG-FET structures for digital logic circuitry and microwave devices. The 2DEG-FET structures, which are known by severalacronyms such
Publikováno v:
SPIE Proceedings.
GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:779
The electrical and structural properties of a severely mismatched MBE‐grown InGaAs/AlGaAs heterojunction were investigated. The heterojunction shows rectification and the InGaAs’s mobility is measured to be 142 cm2 /V s. This low mobility InGaAs
Publikováno v:
IEEE Electron Device Letters. 10:525-527
A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate break
Publikováno v:
SPIE Proceedings.
Progress in high-speed GaAs charge-coupled device (CCD) research is described. Experimental and modelling results are reported for two different structures; capacitive gate CCD's and resistive gate CCD's. A charge packet replicator/subtractor circuit
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5:982
Interfacial As is shown to reduce reverse‐bias current in Al–GaAs Schottky barriers. It is suggested that the leakage reduction is associated with the removal of low work function phases at the interface. In addition, current–voltage measuremen