Zobrazeno 1 - 10
of 38
pro vyhledávání: '"D.S. Deakin"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:891-897
Ka- and Q-band watt-level monolithic power amplifiers (PAs) operating at a low drain bias of 3.6 V are presented in this paper. Design considerations for low-voltage operation have been carefully studied, with an emphasis on the effect of device mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6196c89c20cb57266446033bf8dc4a12
https://doi.org/10.1109/22.846714
https://doi.org/10.1109/22.846714
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:1237-1241
A 44-GHz monolithic waveguide plane-wave amplifier (PWA) with improved unit cell design is presented in this paper. The unit cell is a two-stage direct-coupled design and satisfies size, bistability, and stability requirements of the waveguide PWA. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b778578a7ebba5972d9bf274a2dc960
https://doi.org/10.1109/22.709463
https://doi.org/10.1109/22.709463
Autor:
Emilio A. Sovero, D.S. Deakin, Jeffrey T. Cheung, P.H. Kobrin, I. S. Gergis, C.L. Lastufka, J. Lopez
Publikováno v:
Physica C: Superconductivity. 175:603-606
The surface resistance of YBa 2 Cu 3 O 7− x (YBCO thin films were obtined from measuring the Q -factor of inverted microstrip resonators at 6–7 GHz over the temperature range of 16–80 K. The inverted microstrip which included a sapphire spacer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036df953d13d5a49b313ae34c8a0ff2b
https://doi.org/10.1016/0921-4534(91)90272-z
https://doi.org/10.1016/0921-4534(91)90272-z
Publikováno v:
IEEE Microwave and Guided Wave Letters. 9:154-156
A monolithic chip with a single 80 /spl mu/m HEMT device, 1.25/spl times/3.0 mm/sup 2/ in size, has been tested as both a fundamental and a subharmonic mixer. With input filter networks for K- and Q-bands providing two separate radio frequency/local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::596db90b26325a6af4f0305048aed073
https://doi.org/10.1109/75.763245
https://doi.org/10.1109/75.763245
Autor:
John A. Higgins, J.J. Yao, J.F. DeNatale, Emilio A. Sovero, J.H. Hong, Robert E. Mihailovich, D.S. Deakin
Publikováno v:
1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference.
We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build MEMS microrelays along GaAs PHEMT devices without any sacrifice in performance or yield to eith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d590662ec7d31799e8b17af571cba1a
https://doi.org/10.1109/imoc.1999.867103
https://doi.org/10.1109/imoc.1999.867103
Publikováno v:
RAWCON 99. 1999 IEEE Radio and Wireless Conference (Cat. No.99EX292).
The authors report on the design, fabrication and performance of 1 W amplifiers for 26 GHz and 40 GHz. The design approach uses standard MMIC elements: microstrip transmission lines, MIM capacitors, through-the-substrate vias for low impedance ground
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b701cafa3c2f1442229380f97377c2aa
https://doi.org/10.1109/rawcon.1999.810992
https://doi.org/10.1109/rawcon.1999.810992
Autor:
W.W. Hooper, Lawrence E. Larson, D.A. Pierson, S.E. Rosenbaum, L.G. McCray, M.A. Thompson, C.S. Chou, Joseph F. Jensen, D.S. Deakin, M.J. Delaney
Publikováno v:
IEEE International Solid-State Circuits Conference.
Previous implementations of high-performance op amps in GaAs technology have been hindered by low transistor g/sub m/r/sub ds/, light sensitivity, and excessive backgating, which have limited gain and bandwidth. These limitations are overcome in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63317a5feeeb1d9d96432d25753d18de
https://doi.org/10.1109/isscc.1989.48184
https://doi.org/10.1109/isscc.1989.48184
Autor:
W.J. Ho, D.S. Deakin, John A. Higgins, R.R. August, T.N. Trinh, R.D. Stein, Gerard Sullivan, Emilio A. Sovero
Publikováno v:
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..
The authors report the first monolithic integration of high-quality Schottky diodes (F/sub c/>1250 GHz) and high-performance, low-noise HEMT (high electron mobility transistor) devices (F/sub max/>120 GHz, F/sub min/ >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e27833fc15c39f37465234553202fc8
https://doi.org/10.1109/gaas.1988.11081
https://doi.org/10.1109/gaas.1988.11081
Publikováno v:
15th Annual GaAs IC Symposium.
The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c6385623f1a04242f03317387eb977
https://doi.org/10.1109/gaas.1993.394431
https://doi.org/10.1109/gaas.1993.394431
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
We report the design and operation of a monolithic plane wave PHEMT amplifier operating at millimeter wave frequencies. The array is made up of input slot antennas (5/spl times/7 array) and output patch antennas (4/spl times/8 array) polarized in ort
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca10163cb020161bdbcb2ef7eea8822
https://doi.org/10.1109/mwsym.1996.511224
https://doi.org/10.1109/mwsym.1996.511224