Zobrazeno 1 - 10
of 42
pro vyhledávání: '"D.R. Tieger"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:372-377
Mass resolution is a common and fairly easy-to-measure quantity in ion implantation. The interpretation of mass spectra and the calculated mass resolution ( M /Δ M ), however, is not always straightforward. The effect of mass resolution on important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e89a6d014ab4b681b74e7a1b8c34b628
https://doi.org/10.1016/j.nimb.2005.05.036
https://doi.org/10.1016/j.nimb.2005.05.036
Publikováno v:
Review of Scientific Instruments. 73:816-818
Reliable and efficient beam generation and setup can provide significant cost-of-ownership advantages for modern high current ion implantation in the semiconductor industry. Automated tuning algorithms which make use of fundamental models to aid the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc9b8dc14164a032015748725975d6d5
https://doi.org/10.1063/1.1427352
https://doi.org/10.1063/1.1427352
Autor:
D. A. Kniffen, B. W. Hughlock, R. C. Hartman, C.E. Fichtell, D. J. Thompson, Stanley D. Hunter, E.C. Booth, E. J. Schneid, A.-H. Walkers, Yiing Lin, E.B. Hughess, D.R. Tieger, K. Dow, P. L. Nolan, D. L. Bertsch, W.W. Sapp, Gottfried Kanbach
Publikováno v:
1990 IEEE Nuclear Science Symposium Conference Record.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd3cb5997069e7646c218b5de6a708f
https://doi.org/10.1109/nssmic.1990.693399
https://doi.org/10.1109/nssmic.1990.693399
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
An experimental investigation of the noise content of low energy, high perveance ion beams is presented. Measurements of beam noise are made by monitoring Faraday beam current. Certain amplitude and frequency characteristics of this noise are identif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae96295514eba0d512a85c3bfc08b31b
https://doi.org/10.1109/iit.2000.924229
https://doi.org/10.1109/iit.2000.924229
Autor:
H. Matsushita, H. Rutishauser, B.S. Freer, H. Muto, A.S. Perel, Michael Graf, D.R. Tieger, M. Stone, M. Kabasawa
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Germanium is typically used in ultra-shallow junction formation as an amorphization implant to reduce channeling in subsequent low energy boron dopant implants. Several equipment and process considerations can be associated with germanium operation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679e72d772a1ad769d9911d3d0ab801b
https://doi.org/10.1109/iit.2002.1258030
https://doi.org/10.1109/iit.2002.1258030
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
The need for ultra-shallow junction formation in advanced devices makes the development of high throughput ion implantation solutions at very low (sub-keV) energies increasingly more important. The fundamental challenges confronting the implant tool
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb838888edee94bf248b2cf2cb5507e8
https://doi.org/10.1109/iit.2002.1258015
https://doi.org/10.1109/iit.2002.1258015
Autor:
D. A. Kniffen, E. J. Schneid, R. C. Hartman, D. J. Thompson, B. W. Hughlock, H. I. Nel, E. B. Hughes, H. Rothermel, R. Hofstadter, Stanley D. Hunter, P. Sreekumar, C. E. Fichtel, A. H. Walker, H. A. Mayer-Hasselwander, D.R. Tieger, J. R. Mattox, Y. C. Lin, P. L. Nolan, D. L. Bertsch, Gottfried Kanbach, K. Pinkau, M. Sommer, C. von Montigny
Publikováno v:
The Astrophysical Journal Supplement Series. 86:629
The calibration of the (EGRET) prior to its launch aboard the Compton Gamma Ray Observatory, the continuing calibration after launch, and instrument-performance results based on calibrations and early postlaunch data, are described. Particular attent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23a4c30a24a3d3c208400470227ffd4c
https://doi.org/10.1086/191793
https://doi.org/10.1086/191793
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