Zobrazeno 1 - 10
of 93
pro vyhledávání: '"D.R. Chopra"'
Autor:
Sunil Kumar, Rajinder Kaur, Tarun Narang, Wani Aadil, Arun Kumar Rawat, Tahseena Akhtar, D.R. Chopra
Publikováno v:
Indian Journal of Medical Research, Vol 148, Iss 4, Pp 422-426 (2018)
The Indian Journal of Medical Research
The Indian Journal of Medical Research
Background & objectives: Psoriasis is a chronic inflammatory skin disease with unknown aetiology. So far studies have confirmed that interleukins, pro-inflammatory factors and T-cell activation play major role in the development of disease. Interleuk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f6eae24cb928c17525125116240904f
http://www.ijmr.org.in/article.asp?issn=0971-5916
http://www.ijmr.org.in/article.asp?issn=0971-5916
Akademický článek
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Autor:
Rajinder Kaur, Tahseena Akhtar, Arun Kumar Rawat, Parneet Kaur, D.R. Chopra, Tarun Narang, Tej Bali Singh, Aadil Wani
Publikováno v:
Journal of Clinical and Diagnostic Research, Vol 12, Iss 10, Pp GC01-GC05 (2018)
Introduction: IFN-γ and IL-22 are Th1/Th17 cytokine which have been shown to play important role in the development of autoimmune disorder like psoriasis. Aim: To identify the possible association of IFN-γ and IL-22 Single Nucleotide Polymorphisms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b828123acf3204f8f7b102373a7348b8
Autor:
A. R. Chourasia, D.R. Chopra
Publikováno v:
Thin Solid Films. 266:298-301
The TiN/SiO2 interface has been studied using X-ray photoelectron spectroscopy (XPS). The underlying layer of SiO2 was thermally grown on a Si substrate. A thin film of TiN was then deposited on a SiO2/Si substrate by low-pressure chemical vapor depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4597b77d9e240336655f431c437b14a
https://doi.org/10.1016/0040-6090(95)06651-9
https://doi.org/10.1016/0040-6090(95)06651-9
Publikováno v:
Journal of Alloys and Compounds. 224:287-291
Soft X-ray appearance potential spectroscopy (SXAPS) has been employed to study the changes in the electronic structure of PrMn2 and SmMn2 intermetallics as a result of aloying. In this technique the total X-ray emission associated with the threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb569c6a7a9ba7bcf12abebaab9f700
https://doi.org/10.1016/0925-8388(95)01567-1
https://doi.org/10.1016/0925-8388(95)01567-1
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 70:23-28
The GdMn2 intermetallic has been studied using soft X-ray appearance potential spectroscopy (SXAPS) which exploits the abrupt changes in the total X-ray emission associated with the thresholds for the excitations of core levels of the atoms in the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56dd79acb3b2385d10836503b0358a49
https://doi.org/10.1016/0368-2048(94)02219-p
https://doi.org/10.1016/0368-2048(94)02219-p
Publikováno v:
Surface Science. 275:424-432
About 25 A of CaF 2 was epitaxially grown on Si(111) at substrate temperatures of 25, 300, 600 and 800°C. The analysis was carried out by non-destructive depth profiling using angle-resolved core level X-ray photoelectron spectroscopy. Ca 2p, F 1s a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd58edb14502b6ed4fbc8775db72831
https://doi.org/10.1016/0039-6028(92)90815-n
https://doi.org/10.1016/0039-6028(92)90815-n
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1547-1553
With the advent of high temperature superconductors, attempts are made to integrate these materials with silicon so as to evaluate their potential in semiconductor technology. In order to investigate the reactivity between the superconductor and sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ffec5c8edc9759e682663f92240e07
https://doi.org/10.1116/1.578043
https://doi.org/10.1116/1.578043
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:115-121
Thin films (∼300 A) of the superconductor YBa2Cu3O7−y were deposited on a Si 〈100〉 substrate by molecular beam epitaxy. The sample was then cleaved in two pieces and one of these was annealed at 860 °C for 3 h. X‐ray photoelectron spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e559f31dd589180297b70d98d1f35dfc
https://doi.org/10.1116/1.578123
https://doi.org/10.1116/1.578123
Autor:
D.R. Chopra, K. K. Mishra, T. D. Black, C. A. Dark, Suresh C. Sharma, M. Green, R. C. Hyer, A. R. Chourasia
Publikováno v:
Journal of Materials Research. 5:2424-2432
We have deposited diamond films on Si〈111〉 using hot filament assisted chemical vapor deposition at low pressures ∼25 Torr. Diamond films deposited at different relative concentrations of methane (ranging from 0.25% to 2.0%) in methane-hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba129ea3834dfd4f8c5cbaccd977a073
https://doi.org/10.1557/jmr.1990.2424
https://doi.org/10.1557/jmr.1990.2424