Zobrazeno 1 - 10
of 32
pro vyhledávání: '"D.R. Calawa"'
Autor:
Leo J. Missaggia, Michael Nickerson, D.R. Calawa, Benedikt Schwarz, Christine A. Wang, Michael K. Connors, Daniel McNulty, Kevin Creedon, Tobias S. Mansuripur, Joseph P. Donnelly, Federico Capasso, Dominic F. Siriani
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 23:1-13
The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL performance, and establishing correlations between epitaxial growth and materials properties is of critical importance for continuing improvements. We presen
Autor:
Mei Chai Zheng, D.R. Calawa, Federico Capasso, Daniel McNulty, A. Akey, Leo J. Missaggia, Michael K. Connors, Benedikt Schwarz, Dominic F. Siriani, Tobias S. Mansuripur, Christine A. Wang, Joseph P. Donnelly
Publikováno v:
Journal of Crystal Growth. 464:215-220
The measured emission wavelengths of AlInAs/GaInAs/InP quantum cascade lasers (QCLs) grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be ~ 0.5–1 µm longer than the designed QCL wavelength. This work clarifies the origin of
Autor:
Tobias S. Mansuripur, D.R. Calawa, Leo J. Missaggia, Michael K. Connors, Daniel McNulty, Dominic F. Siriani, Christine A. Wang, Mei Chai Zheng, Federico Capasso, Joseph P. Donnelly
Publikováno v:
Journal of Crystal Growth. 452:263-267
We report on a study of the effects of intentional thickness and doping variations on QCL performance. The measured QCL data had very similar trends to those predicted by an in-house QCL model. It was found that absolute changes to the QCL period had
Autor:
Michael K. Connors, Antonio Sanchez, C. A. Wang, Anish K. Goyal, M. Spencer, Stefan Menzel, Daniel McNulty, Federico Capasso, D.R. Calawa, George W. Turner
Publikováno v:
Journal of Crystal Growth. 370:212-216
AlInAs/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-ma
Publikováno v:
ECS Transactions. 41:139-149
This work reports the growth and characterization of lattice-matched (LM) and strain-compensated (SC) AlInAs/GaInAs/InP heterostructures for quantum cascade lasers (QCLs) emitting in the mid-wave infrared (MWIR) and long-wave infrared (LWIR) waveleng
Autor:
Allen Hsu, Anish K. Goyal, Joseph P. Donnelly, Antonio Sanchez-Rubio, Christine A. Wang, Robin K. Huang, Qing Hu, George W. Turner, Benjamin S. Williams, D.R. Calawa
Publikováno v:
Journal of Crystal Growth. 312:1157-1164
Strain-compensated (SC) GaInAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by organometallic vapor phase epitaxy (OMVPE). The structures were characterized by h
Autor:
George W. Turner, D.R. Calawa, Frederick J. O'Donnell, S.G. Cann, Anish K. Goyal, Antonio Sanchez-Rubio, Joseph P. Donnelly, Leo J. Missaggia, Jason J. Plant, Robin K. Huang, C. A. Wang
Publikováno v:
Journal of Crystal Growth. 310:5191-5197
The growth and characterization of highly strain-balanced (SB) GaInAs/AlInAs/InP quantum-well heterostructures for mid-infrared quantum cascade lasers (QCLs) are reported. Growth conditions were established to provide a step-flow growth mode, which i
Publikováno v:
Journal of Crystal Growth. 310:1583-1589
InP 1− y As y epitaxial layers grown lattice-mismatched (LMM) on InP substrates were investigated as a new materials system for multiplication layers in Geiger-mode avalanche photodiodes (GM APDs) for detection of photons in the range 1.6–2.5 μm
Publikováno v:
Journal of Crystal Growth. 261:372-378
InAsSb/GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by organometallic vapor phase epitaxy for wafer bonding and epitaxial transfer. The InAsSb epilayer, which is used as an etch-stop layer, is the template for subsequent growth of GaInAsSb/AlGa
Publikováno v:
Journal of Crystal Growth. 225:377-383
Atomic force microscopy was used to study changes in the surface step structure of GaInAsSb layers with varying degrees of phase separation. The layers were grown by organometallic vapor phase epitaxy on (001) GaSb substrates with 2{sup o} miscut ang