Sex identification of ducklings based on acoustic signals

Autor: J.J. Yin, W.G. Li, Y.F. Liu, D.Q. Xiao

Publikováno v: Poultry Science, Vol 103, Iss 6, Pp 103711- (2024)

ABSTRACT: Sex identification of ducklings is a critical step in the poultry farming industry, and accurate sex identification is beneficial for precise breeding and cost savings. In this study, a method for identifying the sex of ducklings based on a

Externí odkaz: https://doaj.org/article/108fe4e4836246b78c77cd4dd3b3840f

Research on freeze-thaw fatigue of asphalt mixture based on ADE theory

Autor: W. Zhan, S. Gao, D.Q. Xiao, Y.Q. Yu, J.C. Wang

Publikováno v: Green and Intelligent Technologies for Sustainable and Smart Asphalt Pavements ISBN: 9781003251125
Green and Intelligent Technologies for Sustainable and Smart Asphalt Pavements

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c61640b1cbb4ced2a689638741d1da73
https://doi.org/10.1201/9781003251125-32

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Autor: D.Q. Xiao, W.D. Li, Juan Gao, Gang He, S.S. Jiang, Shuang Liang, P. Jin, Li Zhu

Publikováno v: Journal of Materials Science & Technology. 33:901-906

In the current work, in situ surface passivation Ge substrate by using trimethylaluminum (TMA) prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6669f7cb2d1eb4003b75d365bbbb372
https://doi.org/10.1016/j.jmst.2017.04.021

Interfacial modulation and electrical properties improvement of solution-processed ZrO 2 gate dielectrics upon Gd incorporation

Autor: D.Q. Xiao, Gang He, J. Gao, J.G. Lv, Minghua Liu, Z.Q. Sun, S.S. Jiang, P. Jin, Peihong Wang, W.D. Li

Publikováno v: Journal of Alloys and Compounds. 699:415-420

In this work, the band gap, interfacial properties and electrical properties of Gd doped ZrO2 high-k gate dielectric films deposited by solution method have been systematically investigated. Results have shown that Gd doping can increase band gap ene

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2c20b5c308dd9ff74ecb14f30caa9ee
https://doi.org/10.1016/j.jallcom.2016.12.376

Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature

Autor: C.Y. Zheng, Gang He, J.G. Lv, D.Q. Xiao, P. Jin, J. Gao, Z.Q. Sun, Mulong Liu, Xurong Chen

Publikováno v: Journal of Alloys and Compounds. 691:504-513

In current work, effects of rapid thermal annealing on the interface chemical bonding states, band alignment, and electrical properties of atomic-layer-deposition-derived HfAlO/Al 2 O 3 gate stack on Si substrates have been studied by X-ray photoemis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aaba27e8832be3dc4c9752160e997ea3
https://doi.org/10.1016/j.jallcom.2016.08.289