Zobrazeno 1 - 10
of 73
pro vyhledávání: '"D.P. Wilt"'
Publikováno v:
Journal of Crystal Growth. 225:391-396
Low pressure metal-organic vapor phase epitaxy (MOVPE) is the dominant technology for the fabrication of transmitters and detectors for the fiber optic communication industry. These high bandwidth devices typically utilize heterostructure designs inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21eb355991b3b6b711db8bd78b1f6883
https://doi.org/10.1016/s0022-0248(01)00891-0
https://doi.org/10.1016/s0022-0248(01)00891-0
Autor:
D.P. Wilt
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
The reliability of InGaAs/InP semiconductor lasers at typical use conditions is extremely high. This has led to their successful deployment in applications ranging from terrestrial long-haul communication links (MTTF/spl ges/25 years) to transoceanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d03f1d92c4925b39292cf5d562db748
https://doi.org/10.1109/iciprm.1994.328225
https://doi.org/10.1109/iciprm.1994.328225
Autor:
D.P. Wilt
Publikováno v:
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
The invention of the Er-doped optical amplifier has revolutionized the world of long-wavelength transmission systems. With the use of 1.55 /spl mu/m optical line amplifiers, transmission systems utilizing 1.55 /spl mu/m DFB lasers can reach span dist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4903cea96bdd65fa98f696f24ae261c0
https://doi.org/10.1109/iciprm.1998.712794
https://doi.org/10.1109/iciprm.1998.712794
Autor:
D.P. Wilt, G.J. Przybylek, C.W. Lentz, David Alan Ackerman, M.W. Focht, L.J.P. Ketelsen, L. Zhang, K.K. Kamath, K.G. Glogovsky, John Asher Johnson, C.W. Ebert, Joseph Michael Freund, M. Park, Mark S. Hybertsen, C.L. Reynolds
Publikováno v:
Integrated Photonics Research.
We report measurements of excess wavelength chirp caused by high frequency electrical crosstalk between an electroabsorption modulator and the tuning section of a monolithically integrated DBR laser. The high tuning efficiency of the laser leads to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c369ca44639000ff83479074ab40307
https://doi.org/10.1364/ipr.2000.ifg2
https://doi.org/10.1364/ipr.2000.ifg2
Publikováno v:
Applied Physics Letters. 56:111-113
We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 μm GaInAsP gain region, an active waveguide, and a satur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::509ec0df16dc3e4d0738cea1081f9820
https://doi.org/10.1063/1.103046
https://doi.org/10.1063/1.103046
Publikováno v:
Semiconductor Lasers Advanced Devices and Applications.
We review the key market and technological requirements on semiconductor lasers for commercial applications in telecommunications. We will cover high volume applications for access systems as well as high-reliability and high-performance requirements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074303e041522349151bce008d6b9120
https://doi.org/10.1364/slada.1995.wa.1
https://doi.org/10.1364/slada.1995.wa.1
Publikováno v:
International Conference on Indium Phosphide and Related Materials.
Some published results on mode locked monolithic lasers are reviewed. Optical spectra of a typical hybrid mode-locked monolithic device for different levels of RF power and frequency are shown and discussed, as are effects of detuning the modulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3267754cf193eb1f6271dc77d36e461a
https://doi.org/10.1109/iciprm.1990.203047
https://doi.org/10.1109/iciprm.1990.203047
Autor:
V. G. Riggs, Suet Yi Leung, M. W. Focht, D.L. Van Haren, K. E. Strege, D.P. Wilt, J. Koszi, S.G. Napoltz, G. Przyblek, J. Lopata, Y. Twu, P.M. Nitzche, J. L. Zilko, J. P. Blaha, L.J.P. Ketelsen, J. A. Long, C. B. Roxlo
Publikováno v:
IEEE Journal of Quantum Electronics. 25:2091-2095
The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure requires three epitaxial growths and is designed to allow good control of the width of the active layer using straightforward chemical etching techniques. The base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39a28eff2be7deeb1183b1b1f9fcf3ba
https://doi.org/10.1109/3.35720
https://doi.org/10.1109/3.35720
Publikováno v:
MRS Proceedings. 160
Single layers of ~ 0.5µm thick InuGa1-uAs1-vPv (0.52 < u < 0.63 and 0.03 < v < 0.16) were grown epitaxially on InP(100) substrates by liquid phase epitaxy at ~ 630°C. The compositions of the films were chosen to yield a constant banndgap of ~ 0.8 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0012bb6a62eb2109c39f37262deb0742
https://doi.org/10.1557/proc-160-171
https://doi.org/10.1557/proc-160-171
Publikováno v:
International Technical Digest on Electron Devices Meeting.
The first results for hybrid mode locking of semiconductor lasers are reported. Hybrid mode locking combines both active and passive mode locking to produce shorter mode-locked pulses. These functions are integrated into monolithic devices with a 1.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a696602d37c5449a571509c59e97c547
https://doi.org/10.1109/iedm.1989.74190
https://doi.org/10.1109/iedm.1989.74190