Zobrazeno 1 - 10
of 31
pro vyhledávání: '"D.P. Mathur"'
Publikováno v:
Applied optics. 9(8)
A new germanium photodiode having an extremely uniform quantum-efficiency from the visible to 1.65 microns has been developed. The device consists of a lithium-drifted junction in which the light enters in a direction parallel to the junction, thereb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0a13872fdc9922a3c66c55a0f5d799b
https://pubmed.ncbi.nlm.nih.gov/20094150
https://pubmed.ncbi.nlm.nih.gov/20094150
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
Gate-oxide breakdown measurements were made to determine the quality of the Si surface of plasma-thinned Si wafers. Circular MOS capacitors having a thermal oxide of 190 A were fabricated on unprocessed bulk Si wafers and plasma-thinned wafers. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf578ea4e0bd861f96dad3dbc083d927
https://doi.org/10.1109/soi.1993.344591
https://doi.org/10.1109/soi.1993.344591
Publikováno v:
Proceedings. IEEE International SOI Conference.
The continuous decrease in the CMOS device dimension towards the deep submicrometer region has necessitated a concomitant decrease in the thickness of the gate oxide to a few hundred angstroms or less. The quality of such very thin oxides are strongl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c88e08abf6ee51e538c0d392f8074de
https://doi.org/10.1109/soi.1994.514254
https://doi.org/10.1109/soi.1994.514254
Publikováno v:
1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).
We present here results of experiments in which we measured and processed bonded SOI wafers with active layers between 1 and 30 /spl mu/m at high throughput using the AcuThin/sup TM/ plasma-assisted chemical etch (PACE) process on our PWS-200 PACE sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::783a1d2fb0810184db56e42c9fe39c10
https://doi.org/10.1109/soi.1998.723165
https://doi.org/10.1109/soi.1998.723165
Publikováno v:
IEEE Transactions on Electron Devices. 18:1003-1010
A new configuration of the capacitor-photodiode type of image sensor is described which results in appreciable reduction of switching transients at the sensor's output. The modification consists of replacing the photodiode by a phototransistor operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdc734f2d301bfce45d6fcfc6d717c0
https://doi.org/10.1109/t-ed.1971.17323
https://doi.org/10.1109/t-ed.1971.17323
Autor:
P. R. Chernay, J.L. Gabrilove, D.P. Mathur, N.B. Kardon, H.G. Rose, L.Y. Hsu, G.L. Nicolis, R. Sabetghadam, Kurt Hirschhorn
Publikováno v:
The American Journal of Medicine. 52:482-491
Two monozygotic twins with male phenotype had a 46,XX karyotype in the buccal mucosa, blood, skin and testis. The data in fourteen previously described phenotypic males with the 46,XX karyotype are reviewed. Although they resemble patients with class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c39f4356e7edddc89ac30e52f2327765
https://doi.org/10.1016/0002-9343(72)90039-3
https://doi.org/10.1016/0002-9343(72)90039-3
Autor:
F.T. Hedgcock, D.P. Mathur
Publikováno v:
Physics Letters. 3:71-73
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cde23aeb37d9af65bda3e1638073ef96
https://doi.org/10.1016/0031-9163(62)90009-4
https://doi.org/10.1016/0031-9163(62)90009-4
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