Zobrazeno 1 - 10
of 40
pro vyhledávání: '"D.P. Docter"'
Publikováno v:
IEEE Journal of Quantum Electronics. 32:1029-1037
A procedure for optimizing MQW hetero-nipi waveguide phase modulators is presented that includes both drive voltage and frequency response. Experimental phase change, absorption change, and frequency response measurements of a modulator designed usin
Autor:
P.R. Claisse, Geoffrey W. Taylor, P.A. Kiely, D.P. Docter, S. Daryanani, P.A. Evaldsson, S.K. Sargood, P. Cooke, T. Vang
Publikováno v:
IEEE Journal of Quantum Electronics. 29:785-800
An approach to laser-based optoelectronic integration is described. It is shown that by using a single epitaxial growth structure and a common processing sequence, all the electrical and optical devices required for a complete optoelectronic integrat
Autor:
P. Cooke, P.R. Claisse, C. A. Burrus, D.P. Docter, S.K. Sargood, T. Vang, Geoffrey W. Taylor, P.A. Kiely
Publikováno v:
IEEE Journal of Quantum Electronics. 29:136-149
An approach to optoelectronic integration utilizing a universal heterostructure with a single GaAs quantum-well active region is presented. The inversion channel forms the basis of a heterojunction field-effect transistor, a lateral current injection
Publikováno v:
IEEE Transactions on Electron Devices. 39:2523-2528
Experimental results are presented for the GaAs/AlGaAs single-quantum-well DOES (double heterostructure optoelectronic switch) laser. Switching data are reported for the three-terminal structure in which inversion channel contact is made via a self-a
Publikováno v:
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.
Autor:
P. Evaldsson, D.P. Docter, S. Daryanani, P.A. Kiely, P.R. Claisse, P. Cooke, S.K. Sargood, Geoffrey W. Taylor, T. Vang
Publikováno v:
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.
Publikováno v:
IEEE Photonics Technology Letters. 7:878-880
We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only 900-/spl Aring/-thick intrinsic regions, and thus can achieve very high fields with modest rev
Autor:
Charles H. Fields, Donald A. Hitko, M. Case, J.A. Henige, Joseph F. Jensen, M. Lui, A.R. Kramer, D.P. Docter, Marko Sokolich, Y.K. Brown, Gopal Raghavan
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
Using experimental data and a sum of weighted RC time constant model we optimized AlInAs/GaInAs SHBT devices for minimum gate delay in a static divider. The best result obtained, a 55 GHz maximum clock rate, is to our knowledge the highest toggle rat
Autor:
Miroslav Micovic, P.A. Evaldsson, P.R. Claisse, A. Lepore, P.A. Kiely, K.F. Brown-Goebeler, Geoffrey W. Taylor, Roger J. Malik, F.G. Storz, T. Vang, D.P. Docter
Publikováno v:
Electronics Letters. 30:529-531
The scaling to 0.5 µm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm = 205 mS/mm and VTH = –0.34 V have been obtained for 0.5 × 100 µm2 devices. For shorter gat
Autor:
J.B. Shealy, M. Case, M.A. Thompson, Adele E. Schmitz, L.D. Nguyen, J. A. Pusl, M. Hu, D.P. Docter, J.J. Brown
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
Performance and reliability data for a high-efficiency microwave power amplifier design utilizing AlGaAs-InGaAs-GaAs pHEMTs are reported. A single stage MIC amplifier fabricated with a 5.6 mm gate width pHEMT resulted in P/sub out/=2.5 W and PAE=73%