Zobrazeno 1 - 10
of 39
pro vyhledávání: '"D.M. Depoy"'
Autor:
S. Burger, L. R. Danielson, E. Brown, G. Nichols, Christine A. Wang, P. F. Baldasaro, H. Ehsani, W.F. Topper, G. C. Taylor, Michael K. Connors, K. D. Rahner, Ramon U. Martinelli, S. Anikeev, D.M. Depoy, Z. Shellenbarger, M. W. Dashiell, D. Donetski, J Beausang, Jizhong Li, Serge Luryi, Gregory Belenky, Robin K. Huang, P. Talamo, George W. Turner, P. Fourspring
Publikováno v:
IEEE Transactions on Electron Devices. 53:2879-2891
InxGa1-xAsySb1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5876b94aefb3697d069f130d35bc4a
https://doi.org/10.1109/ted.2006.885087
https://doi.org/10.1109/ted.2006.885087
Autor:
R. J. Wehrer, R. G. Mahorter, F. Newman, S. Murray, S. D. Link, C.S. Murray, B. Wernsman, R. R. Siergiej, R. W. Schultz, D. Taylor, T. Rahmlow, R. L. Messham, G. P. Schmuck, M. N. Palmisiano, D.M. DePoy
Publikováno v:
IEEE Transactions on Electron Devices. 51:512-515
An InGaAs monolithic interconnected module (MIM) using reflective spectral control has been fabricated and measured in a thermophotovoltaic radiator/module system (radiator, optical cavity, and thermophotovoltaic module). Results showed that at a rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeada6bc418c51fa6a7280a9225d564c
https://doi.org/10.1109/ted.2003.823247
https://doi.org/10.1109/ted.2003.823247
Autor:
G. Nichols, M. N. Palmisiano, D.M. Depoy, C. A. Wang, D. A. Shiau, Michael K. Connors, Robin K. Huang, P. G. Murphy, P. W. O’Brien, Alfredo C. Anderson
Publikováno v:
Applied Physics Letters. 83:1286-1288
GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) cells were monolithically interconnected in series to build open-circuit voltage Voc. GaInAsSb epitaxial layers were transferred to GaAs by wafer bonding with SiOx/Ti/Au, which provides electrical isola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284b3bff292c5d51f4b521fbc9e6ceea
https://doi.org/10.1063/1.1602165
https://doi.org/10.1063/1.1602165
Publikováno v:
Applied Physics Letters. 75:1305-1307
We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by organometallic vapor phase epitaxy at a lower temperature (525 °C compared to 550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915ae2321ec90addff126264cfcce83c
https://doi.org/10.1063/1.124676
https://doi.org/10.1063/1.124676
Autor:
George W. Turner, Michael J. Manfra, H. K. Choi, D. L. Spears, D.M. Depoy, G. W. Charache, Christine A. Wang, L. R. Danielson
Publikováno v:
Applied Physics Letters. 71:3758-3760
A large increase in the quantum efficiency (QE) and open-circuit voltage Voc of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584ec24072268da1e03cd91e631102d8
https://doi.org/10.1063/1.120497
https://doi.org/10.1063/1.120497
Autor:
D.M. Depoy, P. G. Murphy, Dmitry Donetsky, P. W. O’Brien, Michael K. Connors, D. A. Shiau, Christine A. Wang, G. Nichols, Alfredo C. Anderson, S. Anikeev, Gregory Belenky, R. K. Huang
GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by remov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3adf6b2ea7dcf63cf5e1e18294509785
https://doi.org/10.2172/821870
https://doi.org/10.2172/821870
Autor:
G. Nichols, C. A. Wang, D.A. Shiau, D.M. Depoy, P. W. O’Brien, M. N. Palmisiano, A.C. Anderson, Robin K. Huang, Michael K. Connors, P. G. Murphy
Publikováno v:
MRS Proceedings. 763
The fabrication, characterization, and performance of wafer-bonded (WB) GaInAsSb thermophotovoltaic (TPV) devices for monolithically series-interconnected cells are reported. TPV epilayers were bonded to GaAs handle wafers with SiOx/Ti/Au. This diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6dbbd5419d9f14339847656bdf5fb5a
https://doi.org/10.1557/proc-763-b2.7
https://doi.org/10.1557/proc-763-b2.7
Autor:
D. A. Shiau, M.K. Connors, R.K. Huang, M.N. Palmasiano, P. W. O’Brien, A.C. Anderson, P. G. Murphy, D.M. Depoy, C.A. Wang, G. Nichols
A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe24c6458e4dd7b039df88df3c92deb
https://doi.org/10.2172/821864
https://doi.org/10.2172/821864
Autor:
D.M. Depoy, C.A. Wang, G. Nichols, Z. L. Liau, P. W. O’Brien, A.C. Anderson, D. A. Shiau, P. G. Murphy
This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back‐surface reflector (BSR). The cells are fabricated by wafer‐bonding GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, removin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31436b7a64d43e16a26120ddd26ffb3b
https://doi.org/10.2172/821703
https://doi.org/10.2172/821703
Publikováno v:
Optical Interference Coatings.
This work considers antimony selenide (Sb2Se3) as a high refractive index material in multilayer coatings requiring low absorption from 1 to 12 ?m. Its usefulness is discussed for a thermophotovoltaic (TPV) system that converts heat to electricity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab2a963b37d8cb4954af05564d8eff4
https://doi.org/10.1364/oic.2001.the4
https://doi.org/10.1364/oic.2001.the4