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pro vyhledávání: '"D.L. John"'
Akademický článek
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Autor:
Ronald J. Benveniste, P. Prieto, M. De La Fuente, D.L. John, Tejan Diwanji, Eric A. Mellon, Y.S. Soni, Benjamin J. Rich, Wei Zhao, C.S. Seldon, G. Azzam, Ricardo J. Komotar, Deukwoo Kwon, Carolina Benjamin
Publikováno v:
International Journal of Radiation Oncology*Biology*Physics. 111:e580-e581
PURPOSE/OBJECTIVE(S) Patients undergoing stereotactic radiosurgery (SRS) for brain metastases often relapse and require additional radiation. Due to the paucity of data, the decision to offer salvage re-irradiation with whole brain radiation therapy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56f901e2677119a5d38be3826936a35
https://doi.org/10.1016/j.ijrobp.2021.07.1560
https://doi.org/10.1016/j.ijrobp.2021.07.1560
Autor:
Ricardo J. Komotar, Benjamin J. Rich, J.B. Bell, Raphael Yechieli, Carolina Benjamin, Eric A. Mellon, Deukwoo Kwon, Ronald J. Benveniste, G. Azzam, Jacques J. Morcos, Michael E. Ivan, D.L. John, Tejan Diwanji, Y.S. Soni
Publikováno v:
International Journal of Radiation Oncology*Biology*Physics. 111:e578-e579
Purpose/Objective(s) Although patients with brain metastasis treated with stereotactic radiosurgery (SRS) in the definitive or post-operative setting have high rates of local control, surveillance imaging is necessary to assess for central nervous sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::517ebed725ee49be77660231c893244f
https://doi.org/10.1016/j.ijrobp.2021.07.1555
https://doi.org/10.1016/j.ijrobp.2021.07.1555
Akademický článek
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Autor:
D.L. John
Publikováno v:
IEEE Transactions on Nanotechnology. 7:48-55
When considering high-frequency signal propagation in bipolar devices, it is customary to invoke a signal velocity in excess of the electron propagation velocity in order to account for the effect of image charges. In this work, we examine the applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf32301ba4b2d1381de7f6a1c5f81a2
https://doi.org/10.1109/tnano.2007.906899
https://doi.org/10.1109/tnano.2007.906899
Publikováno v:
IEEE Transactions on Nanotechnology. 6:711-717
A regional signal-delay analysis is presented for field-effect transistors intended for operation at very high frequencies. For the example used here of a doped-contact carbon nanotube field-effect transistor, the analysis reveals that tunneling into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e735879eaa9dec061a68df8333f47cdc
https://doi.org/10.1109/tnano.2007.907796
https://doi.org/10.1109/tnano.2007.907796
Publikováno v:
Solid State Phenomena. :693-696
The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661180aa1310f400f04306f5559cf4ca
https://doi.org/10.4028/www.scientific.net/ssp.121-123.693
https://doi.org/10.4028/www.scientific.net/ssp.121-123.693
Autor:
D.L. John, D.L. Pulfrey
Publikováno v:
Journal of Computational Electronics. 6:175-178
Factors affecting the modeling of practical carbon nanotube field-effect transistors are addressed, namely: non-coaxial geometries such as the double-planar gate, and the semi-cylindrical gate; the thickness of the gate metalization; the azimuthal va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::131cb0a64b8872bab4eda1346f44ebb1
https://doi.org/10.1007/s10825-006-0080-z
https://doi.org/10.1007/s10825-006-0080-z
Autor:
D.L. John, D.L. Pulfrey
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:708-712
The switching times and on/off-current ratios are computed for Schottky-barrier carbon nanotube field-effect transistors with different tube diameters and insulator thicknesses. It is indicated that it may be difficult to obtain a device exhibiting b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3354fcc25c6917ebf5e48b94d7cfb75
https://doi.org/10.1116/1.2194932
https://doi.org/10.1116/1.2194932
Publikováno v:
Smart Materials and Structures. 15:S9-S13
A self-consistent Schr?dinger?Poisson solver is used to improve upon a recent evaluation of the attainable DC performance of coaxial carbon nanotube field-effect transistors. The earlier evaluation, which was based on the predictions of a compact mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37e9f6868a3e825ce819a99bf8c6161
https://doi.org/10.1088/0964-1726/15/1/003
https://doi.org/10.1088/0964-1726/15/1/003