Zobrazeno 1 - 10
of 436
pro vyhledávání: '"D.L. Ingram"'
Publikováno v:
Acta Horticulturae. :139-144
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02fd452035767c9bc55e9266848fbb1
https://doi.org/10.17660/actahortic.2018.1191.19
https://doi.org/10.17660/actahortic.2018.1191.19
Autor:
Collins, Helen M.1 (AUTHOR) helen.collins@neuro-bio.com, Greenfield, Susan1 (AUTHOR)
Publikováno v:
International Journal of Molecular Sciences. Jun2024, Vol. 25 Issue 11, p6222. 26p.
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:342-344
We have developed a new empirical model to represent the current-voltage (I-V) characteristics of HEMT devices. This model is simple and yet capable of representing the HEMT I-V characteristics with high accuracy. Excellent modeling of the measured d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::945eae88f9e543f0be282d7c6428f58d
https://doi.org/10.1109/75.735415
https://doi.org/10.1109/75.735415
Autor:
H.C. Yen, D.C. Streit, Richard Lai, Michael E. Barsky, R. Grunbacher, Y.C. Chen, D.L. Ingram, T.R. Block
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:399-401
We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-/spl mu/m gate length and 1.28-mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d93e9e5c1c7607cbdffab24da007256
https://doi.org/10.1109/75.736259
https://doi.org/10.1109/75.736259
Autor:
April S. Brown, H.C. Yen, D.C. Streit, Mike Wojtowicz, D.L. Ingram, Liem T. Tran, P. Chin, Ronald W. Grundbacher, Y.C. Chen, Richard Lai, V. Medvedev, Michael E. Barsky, T.R. Block
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 /spl mu/m T-gate device demonstrated state-of-the-art g/sub m/-I/sub max/ combination. It also showed a 1.5 V improvement in on-stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab373379948fbcc38422bb37e38564b0
https://doi.org/10.1109/iciprm.1999.773695
https://doi.org/10.1109/iciprm.1999.773695
Publikováno v:
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).
Presented is the development of a 2-stage 427 mW (26.3 dBm), 19% PAE compact W-band InP monolithic microwave integrated circuit (MMIC) power amplifier with an associated power gain of 8.9 dB. 20% PAE with output power of 407 mW (26.1 dBm) was achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48139f822ac69c79bdd4e9919a6a9805
https://doi.org/10.1109/rfic.1999.805247
https://doi.org/10.1109/rfic.1999.805247
Autor:
Michael E. Barsky, T.R. Block, D. Yamauchi, S.K. Cha, Ronald W. Grundbacher, Y.C. Chen, D.C. Streit, T.P. Chin, J. Kraus, H.C. Yen, Richard Lai, M. Wojtowicz, D.L. Ingram, Barry R. Allen, B. Brunner
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
We present a world-record V-band single-chip InP HEMT power amplifier module. The two-stage amplifier consists of two channels with 4.48 mm total output periphery. It was fabricated using TRW's 0.5 /spl mu/m InP HEMT MMIC production process. The two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd18158dff7eb6e92d58b8f9c5d6b62
https://doi.org/10.1109/gaas.1999.803747
https://doi.org/10.1109/gaas.1999.803747
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.
In this paper, we present on-wafer measured results of Q-band GaAs HEMT switches. This work benchmarks the state-of-the-art performance of a SPDT switch with 1.6 dB insertion loss and 50 dB isolation at 44 GHz; a SPQT switch with 3 dB insertion loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f20194d2a49b1d2ada2851960c13503
https://doi.org/10.1109/gaas.1996.567891
https://doi.org/10.1109/gaas.1996.567891
Autor:
J. Kraus, Richard Lai, L. Sjogren, D.L. Ingram, S. Sing, M. Siddiqui, M. Huang, K. Cha, M. Nishimoto
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
This paper presents the development of a highly integrated multi-functional chip set for low-cost Ka-band transceiver. The transmitter portion consists of a 17.5-to-35 GHz doubler macrocell which delivers >20 dBm of output power, a Ka-band SPDT polar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d704dbeb08bb36a1048fc995db7209e
https://doi.org/10.1109/mwsym.1998.689379
https://doi.org/10.1109/mwsym.1998.689379