Zobrazeno 1 - 10
of 437
pro vyhledávání: '"D.L. Harame"'
Publikováno v:
Semiconductor Science and Technology. 9:2005-2010
The era of integrated circuits based on SiGe heterojunction bipolar transistors arrived with the announcement of a 12-bit digital to analogue converter (DAC) fabricated using an analogue optimization of IBM's SiGe HBT technology. Medium-scale integra
Autor:
Aleksandar Miodrag Tasic, Wouter A. Serdijn, S.S.Y. Yue, D.L. Harame, John R. Long, D.K.L. Ma
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.
A 17GHz RF receiver front-end consisting of a low-noise amplifier, dual balanced mixers, an LC voltage-controlled oscillator, and a frequency tripler implemented using a ring oscillator is presented in this paper. The measured LC-VCO phase noise is -
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
Resonant-inductive degeneration of tail-current noise in a VCO is presented in this paper. Two test oscillators are described: one designed with, and the other without resonant degeneration. By forming a resonance at twice the oscillation frequency i
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
A 3-stage 21 to 26GHz SiGe PA with 21dBm output power is presented. Small-signal gain is approximately 20dB and reverse isolation is 12.5%. On-chip transformers are extensively used to efficiently couple common-base stages and I/O to source and load,
Autor:
J. Malinowski, S.-J. Jeng, M. Gilbert, K. Stein, D. Nguyen-Ngoc, Mehmet Soyuer, Bernard S. Meyerson, D.C. AhIgren, D.L. Harame, D.A. Sunderland, Kathryn T. Schonenberg
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
Summary form only given. Reviews the short but successful history of SiGe HBTs, from the first functionality demonstration in 1987 to the performance of a 1 GHz, 12-bit DAC in 1993. Availability of 60 GHz Fmax bipolar devices in a fully integrated 0.
Publikováno v:
50th Annual Device Research Conference.
Publikováno v:
CICC
A monolithic 4-way power combining balun facilitates the implementation of 21 GHz to 27 GHz power amplifiers using silicon transistors. The combiner transforms a 50 /spl Omega/ output to four 13 /spl Omega/ loads with 3% mismatch at 0.9 dB power loss
Publikováno v:
2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
A 17 GHz RF receiver consisting of an LNA and doubly-balanced mixers coupled by a monolithic 3.7:1 step-down transformer realizes over 70 dB of image-rejection in a 100 GHz-f/sub T/ SiGe BiCMOS technology. Quadrature LO signals are generated with ele
Publikováno v:
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).