Zobrazeno 1 - 10
of 76
pro vyhledávání: '"D.K. Wickenden"'
Publikováno v:
Journal of Luminescence. 63:55-61
Continuous-wave intensity-dependent photoluminescence spectra of periodic four-narrow-asymmetric-coupled-quantum-well structures were measured at different temperatures. Above 215 K, the photoluminescence depends linearly on high pump laser intensiti
Autor:
D.K. Wickenden, T.J. Kistenmacher, R.S. Awadallah, J.M. Spicer, B.M. Brawley, P.A. Vichot, Michael J. Fitch
Publikováno v:
IEEE International Workshop on Antenna Technology Small Antennas and Novel Metamaterials, 2006..
Design, experimental and modeling studies have been undertaken on periodic, multi-frequency two-dimensional arrays of four differently sized metallic split-ring triangular resonators fabricated on a dielectric substrate. A sample consisting of quadra
Autor:
B.M. Brawley, P.A. Vichot, D.K. Wickenden, T. J. Kistenmacher, J.M. Spicer, Michael J. Fitch, R.S. Awadallah
Publikováno v:
2006 IEEE Antennas and Propagation Society International Symposium.
A number of multimodal frequency-selective surfaces (FSS) have been fabricated from arrays of unit cells containing two or four, triangular or square, split-ring resonators. In this paper, the underlying physics of the modulation of the spectral inte
Publikováno v:
29th Annual Proceedings Reliability Physics 1991.
High electron mobility transistor (HEMT) devices from three manufacturers were subjected to accelerated life tests. The purpose of the reliability studies of commercially available gallium arsenide signal transistors was to independently assess their
Autor:
D.K. Wickenden
Publikováno v:
Physics in Technology. 11:211-217
Presents an outline of the physics of LEDs and their construction and describes thick and thin film electroluminescnt devices. The author discusses the characteristics of each type of display and outlines some applications
Publikováno v:
Solid-State Electronics. 27:515-518
We report results on the thermal stability of the Schottky barrier formed by each of two amorphous metal alloys (from the NiNb and TaIr systems) on Si and GaAs. We have found the barrier height to be stable to within 0.05 eV after treatment for
Autor:
J.D. Grange, D.K. Wickenden
Publikováno v:
Solid-State Electronics. 26:313-317
Numerous commercially available semi-insulating GaAs substrates have been implanted with silicon ions and the post implantation annealing carried out using the technique of capless annealing in an arsine atmosphere. Results are presented on the impla
Autor:
D.K. Wickenden
Publikováno v:
Displays. 2:71-75
The rapidly increasing complexity of avionic systems and the decrease in space available for bulky crt based display systems requires a more compact display technology in many applications. This paper describes the initial development and use of red
Publikováno v:
Journal of Luminescence. 5:21-31
Photoluminescence measurements are reported on undoped and on Ge doped single crystal epitaxial layers of GaN, having room temperature carrier concentrations (electrons) in the ranges 1.8 × 1019 to 6.3 × 1019cm−3 and 2.8 × 1018 to 1.5 × 1019cm
Publikováno v:
Scopus-Elsevier
ISCAS (4)
ISCAS (4)
We report on the design and fabrication of surface micromachined microelectromechanical structures (MEMS) in an ultra thin silicon (UTSi) on sapphire CMOS process [Peregrine Semiconductor (PE) Silicon on Sapphire (SOS) process]. This is the first dem
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