Zobrazeno 1 - 10
of 232
pro vyhledávání: '"D.K. Schroder"'
Publikováno v:
IEEE Transactions on Electron Devices. 51:1380-1384
Pseudo-MOSFETs (/spl Psi/-MOSFET) are routinely used for silicon-on-insulator (SOI) material characterization, allowing threshold voltage, electron and hole mobility, doping density, oxide charge, interface trap density, etc. to be determined. The Hg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fc45041ee64c9c6c1f39c9125514cbf
https://doi.org/10.1109/ted.2004.834799
https://doi.org/10.1109/ted.2004.834799
Publikováno v:
IEEE Electron Device Letters. 19:237-240
Boron penetration from p/sup +/ doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide reliability against boron penetration is significantly enhanced. When post poly-Si nitridation is combined wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d4eb3b8dc8810484ed827096690022e
https://doi.org/10.1109/55.701428
https://doi.org/10.1109/55.701428
Publikováno v:
IEEE Electron Device Letters. 19:40-43
Low-frequency (1/f) noise in near-fully-depleted Thin-Film Silicon-On-Insulator (TFSOI) CMOS transistors designed for sub-l-V applications is investigated in the subthreshold region, linear region, and saturation region of operation for the first tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2525cccc6f2755182c32dab6099992
https://doi.org/10.1109/55.658597
https://doi.org/10.1109/55.658597
Autor:
D.K. Schroder
Publikováno v:
IEEE Circuits and Devices Magazine. 14:14-20
Carrier lifetimes in semiconductors have been recently rediscovered by the silicon IC community. This is an opportune time to discuss this topic since lifetime is emerging as an important parameter for describing material, process, and equipment clea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc2664929583db472525b15837b687be
https://doi.org/10.1109/101.735790
https://doi.org/10.1109/101.735790
Publikováno v:
Journal of Crystal Growth. :281-285
We have demonstrated how to use the 44 wavelength ellipsometer for in-situ closed-loop feedback control of a molecular beam epitaxy in order to grow reproducible AlAs GaAs Fabry—Perot cavities. Sample-to-sample reproducibility of the Fabry—Perot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395420f6103a2cdbbb9a1194674d8c9b
https://doi.org/10.1016/s0022-0248(96)01233-x
https://doi.org/10.1016/s0022-0248(96)01233-x
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:2016-2022
Silicon has many advantages as a microwave substrate material including low cost and a mature technology. The aim of this paper is to evaluate the potential of using high-resistivity silicon as a low-cost low-loss microwave substrate through an exper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d19c7981315c7ff9ab0e1fd86405fb
https://doi.org/10.1109/22.414534
https://doi.org/10.1109/22.414534
Publikováno v:
IEEE Transactions on Electron Devices. 40:1251-1257
Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q/sub bd/ of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88508496a4a51a88c3da82a983e77ee4
https://doi.org/10.1109/16.216429
https://doi.org/10.1109/16.216429
Autor:
Kuntal Joardar, D.K. Schroder
Publikováno v:
IEEE Transactions on Electron Devices. 39:1622-1632
Detailed analyses of the small-signal voltage decay (SSVD) method of lifetime measurement have been performed. The main difficulty in voltage decay techniques is that the boundary conditions at the junction are coupled. A solution to the time-depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf85addb3e5855587884aa4d4e422c7f
https://doi.org/10.1109/16.141227
https://doi.org/10.1109/16.141227
Publikováno v:
1996 Proceedings 46th Electronic Components and Technology Conference.
Silicon has many advantages as a system substrate material including low cost and a mature technology. However, Si has not been demonstrated as a good microwave substrate compared to semi-insulating GaAs or quartz. The aim of this paper is to evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854b297767007823704dda80fbfef3a0
https://doi.org/10.1109/ectc.1996.517417
https://doi.org/10.1109/ectc.1996.517417
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
Silicon has many advantages as a microwave substrate material including low cost and a mature technology. The lower resistivity of Si (/spl ap/10 k /spl Omega/-cm) compared to GaAs (/spl ap/10 M /spl Omega/-cm) is perceived as a major disadvantage. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c11400ee2f82065fffcc7c3afc8099
https://doi.org/10.1109/mwsym.1994.335101
https://doi.org/10.1109/mwsym.1994.335101