Zobrazeno 1 - 10
of 62
pro vyhledávání: '"D.J. Walkey"'
Publikováno v:
IEEE Transactions on Advanced Packaging. 30:491-498
An algorithmic technique is presented that allows estimation of maximum temperature rise in a thermal model with component-board thermal interaction. The technique is based on a generalized thermal port grouping to estimate the interface temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad225b5eae7212523b147873dac4ce05
https://doi.org/10.1109/tadvp.2007.898627
https://doi.org/10.1109/tadvp.2007.898627
Publikováno v:
Scopus-Elsevier
This paper presents a new approach to compact thermal modeling. The paper shows how a parameterized reduced thermal model of an IC component can be created based on a parametric model reduction technique. By applying this technique, a large system of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5fbc4549286646f0f25e63b496a3c88
https://doi.org/10.1109/tadvp.2005.846942
https://doi.org/10.1109/tadvp.2005.846942
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 28:70-79
In this paper, a model reduction technique is applied to the thermal modeling of electronic components and devices with complex geometries. The reduced-order model is capable of predicting a complete detailed three-dimensional temperature distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b26600c7d3838f5adbfdef967736012
https://doi.org/10.1109/tcapt.2004.838877
https://doi.org/10.1109/tcapt.2004.838877
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 23:1593-1596
A compact, efficient electrical dual-circuit topology for the representation of transient thermal coupling is presented. Based on controlled sources, the method allows an arbitrary level of complexity to be used for each self and coupled response. Tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef68954f49d4df083198374660cb840
https://doi.org/10.1109/tcad.2004.836722
https://doi.org/10.1109/tcad.2004.836722
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 22:15-25
The prediction of a simple lumped representation of heat sharing through emitter interconnect in high-power multiemitter bipolar devices is compared to numerical thermal simulation and found to exhibit nonphysical results. Using numerical simulation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8917514a207d123016f16f4da6425765
https://doi.org/10.1109/tcad.2002.805727
https://doi.org/10.1109/tcad.2002.805727
Publikováno v:
Microelectronics Reliability. 43:99-110
A numerical self-consistent model to study facet heating in semiconductor lasers is presented. The model consists of the solutions of the 3D heat equation and the 1D longitudinal carrier and photon rate equations. The model is used to investigate fac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d39d766aa106d4208f5095ab0164add2
https://doi.org/10.1016/s0026-2714(02)00271-8
https://doi.org/10.1016/s0026-2714(02)00271-8
Publikováno v:
IEEE Journal of Solid-State Circuits. 2:1198-1206
A new method is described which allows substrate thermal coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate thermal equivalent circuit containing resistors and voltage-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7135150a8a18dbedff7b3af1ddce734
https://doi.org/10.1109/jssc.2002.801200
https://doi.org/10.1109/jssc.2002.801200
Publikováno v:
IEEE Transactions on Electron Devices. 49:1375-1383
A technique is presented that allows the increase in maximum temperature rise due to thermal coupling in multifinger structures to be predicted for a wide range of finger lengths and spacings by reference to a single, normalized characteristic. Appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16b55d931dc1a45e416ea1f94e161481
https://doi.org/10.1109/ted.2002.801306
https://doi.org/10.1109/ted.2002.801306
Publikováno v:
Solid-State Electronics. 46:819-826
A general model for the dependence of integrated device thermal resistance on substrate backside temperature and power dissipation for Si, InP and GaAs substrates is derived by consideration of the role of temperature dependent thermal conductivity i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10cff547502fdf244afd55dcc5970a35
https://doi.org/10.1016/s0038-1101(01)00340-9
https://doi.org/10.1016/s0038-1101(01)00340-9
Publikováno v:
Solid-State Electronics. 46:7-17
Heat flow in short emitter length bipolar devices in trench-isolated technologies is investigated through three-dimensional numerical thermal simulation, and thermal conduction through the trench walls is shown to be important for these structures. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b79834b8d10a60aeb1fe186ab4945620
https://doi.org/10.1016/s0038-1101(01)00305-7
https://doi.org/10.1016/s0038-1101(01)00305-7