Zobrazeno 1 - 10
of 22
pro vyhledávání: '"D.J. Kester"'
Publikováno v:
Surface and Coatings Technology. 113:268-273
Diamond-like nanocomposites (DLN) are a class of amorphous thin film material consisting of a diamond-like carbon (a-C:H) network and a glass-like a-Si:O network. The sliding wear behavior of 1–2-μm-thick DLN coatings on Si was studied using WC an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbae49bae758813984a50798c8c8f9cc
https://doi.org/10.1016/s0257-8972(99)00003-1
https://doi.org/10.1016/s0257-8972(99)00003-1
Autor:
Kevin J. Linthicum, Robert F. Davis, Zlatko Sitar, K. S. Ailey, M. J. Paisley, Satoru Tanaka, R. S. Kern, D.J. Kester, L.B. Rowland
Publikováno v:
Journal of Crystal Growth. 178:87-101
Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III–V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b175c1b122f6d760536a2662555651
https://doi.org/10.1016/s0022-0248(97)00077-8
https://doi.org/10.1016/s0022-0248(97)00077-8
Publikováno v:
Microelectronics Journal. 25:661-674
Fabrication of optoelectronic devices from III-N materials, operable in the blue and ultraviolet regions of the spectrum, has been a goal of many groups since the first infrared and red devices were commercially produced. Commercially viable blue-lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0c0b2e441201054c11f258204c3308
https://doi.org/10.1016/0026-2692(94)90132-5
https://doi.org/10.1016/0026-2692(94)90132-5
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:3074-3081
Boron nitride (BN) thin films have been grown on [100] oriented single crystal Si, diamond, Cu and Ni substrates by ion beam assisted deposition using electron beam evaporation of boron together with simultaneous bombardment by nitrogen and argon ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::212f32c8e6efb6438ec402b21d1d74c7
https://doi.org/10.1116/1.578938
https://doi.org/10.1116/1.578938
Publikováno v:
Diamond and Related Materials. 3:332-336
Boron nitride (BN) thin films have been deposited on single-crystal Si(100) wafers using electron beam evaporation of B with simultaneous bombardment by nitrogen and argon ions. Fourier transform IR spectroscopy and high resolution transmission elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af2b013f83225b4f9766c154415625c1
https://doi.org/10.1016/0925-9635(94)90181-3
https://doi.org/10.1016/0925-9635(94)90181-3
Publikováno v:
Journal of Materials Research. 8:1213-1216
Boron nitride (BN) thin films were deposited on monocrystalline Si(100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect of film thickness on the resultant BN phase was investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17acd471f141406b4cd27f45794b1092
https://doi.org/10.1557/jmr.1993.1213
https://doi.org/10.1557/jmr.1993.1213
Autor:
D.J. Kester, Eric Carlson, K. S. Ailey, Robert F. Davis, Satoru Tanaka, R. S. Kern, Michael D. Bremser, T. W. Weeks, W. G. Perry
Publikováno v:
Advances in Solid State Physics 35 ISBN: 9783528080433
Boron nitride thin films have been grown on the (100) surfaces of Si and diamond via ion beam assisted deposition (IBAD) using electron beam evaporation of B in tandem with N and Ar ion bombardment within the ranges of substrate temperature and ion f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e15907cc63e48b12ff6ce436f86244
https://doi.org/10.1007/bfb0107537
https://doi.org/10.1007/bfb0107537
Autor:
K. S. Ailey, L. L. Smith, D.J. Kester, Robert F. Davis, Chunlei Wang, Zlatko Sitar, Satoru Tanaka, R. S. Kern
Publikováno v:
MRS Proceedings. 339
The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::260febdd13201e2b78d9f468f98c6577
https://doi.org/10.1557/proc-339-351
https://doi.org/10.1557/proc-339-351
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.