Zobrazeno 1 - 10
of 46
pro vyhledávání: '"D.J. Bossert"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 399:12-19
The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0ecbfe8f2eeeae2871ba4cdd052129
https://doi.org/10.1016/j.nimb.2017.03.045
https://doi.org/10.1016/j.nimb.2017.03.045
Autor:
Cun-Zheng Ning, D.J. Bossert, A. Egan, Robert A. Indik, M.W. Wright, Jerome V. Moloney, John G. McInerney
Publikováno v:
IEEE Journal of Quantum Electronics. 34:166-170
We investigate theoretically the master oscillator power amplifier using a semiconductor laser model that is fully time and space (laterally and longitudinally) resolved. We numerically examine the stability of the device and identify the nature of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d35cecf21d067aa02502acd8721224
https://doi.org/10.1109/3.655020
https://doi.org/10.1109/3.655020
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:129-135
The population of the unconfined states, with energies above the band edge of the barrier layers, can be significant in some regions of the active volume in high power lasers and amplifiers. This paper analyzes the influences of these states on optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d0158466271259f05d7f8b8cbece38a
https://doi.org/10.1109/2944.605642
https://doi.org/10.1109/2944.605642
Publikováno v:
IEEE Photonics Technology Letters. 11:1527-1529
Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 /spl mu/m. The dot layer of the laser was grown in a strained quantum well (QW) on a GaAs substrate. Ground state gain is determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9035ca752782fa8e51325206c52f1e68
https://doi.org/10.1109/68.806834
https://doi.org/10.1109/68.806834
Autor:
D.J. Bossert, M.W. Wright
Publikováno v:
IEEE Photonics Technology Letters. 10:504-506
Dynamics of temporal instabilities in tapered broad-area InGaAs SQW semiconductor master oscillator/power amplifier lasers are experimentally investigated. Multigigahertz self-pulsations are evident in the optical and temporal spectra along with coup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4fccaaec497c795f52d2064a5e1f7f
https://doi.org/10.1109/68.662575
https://doi.org/10.1109/68.662575
Publikováno v:
IEEE Photonics Technology Letters. 9:300-302
We describe a method for determining the optimum coating parameters for a single-layer antireflection (AR) facet coating design. Single-layer AR coatings were deposited on broad-area single-quantum-well semiconductor lasers. Experimental and theoreti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3342a384071631a3993bda3c7e0646f2
https://doi.org/10.1109/68.556053
https://doi.org/10.1109/68.556053
Publikováno v:
Conference Proceedings LEOS Lasers and Electro-Optics Society.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0352c0f38d2405f74a87dc0b321c84db
https://doi.org/10.1109/leos.1988.689879
https://doi.org/10.1109/leos.1988.689879
Autor:
D.J. Gallant, D.J. Bossert
Publikováno v:
IEEE Photonics Technology Letters. 8:322-324
Gain, refractive index, and the linewidth enhancement factor, or /spl alpha/-parameter, are measured in broad-area InGaAs-GaAs single-quantum-well semiconductor lasers using below-threshold amplified spontaneous emission spectra and a far-field filte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9908f771093fdf0f398f0ea566e880ff
https://doi.org/10.1109/68.481104
https://doi.org/10.1109/68.481104
Publikováno v:
IEEE Photonics Technology Letters. 7:470-472
A detailed experimental investigation of the effect of optical feedback upon the operation of high-power broad area InGaAs strained quantum well semiconductor lasers is presented. In particular, we examine the effect optical feedback has upon the bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f23ba666545d39d3189b426da3d525
https://doi.org/10.1109/68.384513
https://doi.org/10.1109/68.384513
Autor:
Hong Q. Hou, C.S. Murray, C.X. Wang, R. Stall, J.B. Clevenger, D.J. Bossert, F.D. Newman, Shangzhu Sun
Publikováno v:
IEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and Microcavity Lasers..
Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72754452dfeff97e58af8144b148f891
https://doi.org/10.1109/leosst.2002.1027610
https://doi.org/10.1109/leosst.2002.1027610