Zobrazeno 1 - 10
of 40
pro vyhledávání: '"D.J. Albares"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:413-419
The high RF power-switching properties of the photo-injection p-i-n switch (PIPINS), an optically controlled RF switch, are investigated. Proper functioning of a PIPINS as a low insertion-loss RF switch requires that it operates as a photoconductor,
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:1747-1750
A photovoltaic-FET (PV-FET) is demonstrated for RF//spl mu/wave switching with performance improved over other optoelectronic switches reported while operating with 10-100 times less optical power. The PV-FET characteristics were 3 /spl Omega/ on-res
Publikováno v:
IEEE Transactions on Electron Devices. 39:2240-2247
A simulation program and a comprehensive physical interpretation for risetimes and output powers of the long transit p-i-n diode under high and low optical-pulse excitations as well as at various impedances are presented. The physical interpretation
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:2034-2036
A photovoltaic-p-i-n diode switch, consisting of two back-to-back p-i-n diodes which can be forward biased to the ON state by photovoltaic cell photocurrents, is introduced for optically controlling RF signals. Without light, the switch is in the OFF
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
The RF high power switching properties of an optically controlled RF switch, the photo-injection PIN switch (PIPINS), are investigated. Proper functioning of a PIPINS as a low insertion loss RF switch requires that it operates as a photoconductor, wh
Autor:
S.K. Sun, R. Nguyen, R. Yu, J.P.A. van der Wagt, J.B. Sobti, Vincent Vella, M.J. Choe, S. Beccue, C.T. Chang, D.J. Albares, R.B. Olsen, E.W. Jacobs
Publikováno v:
2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859).
An optically clocked track-and-hold (TH) circuit for improved TH linearity and noise performance is presented. Results with f/sub in/=1.0073 GHz and sample rate f/sub s/=1.003 GS/s show 11.8 SFDR bits and 9.6 SNR bits.
Publikováno v:
IEEE Photonics Technology Letters. 8:1157-1159
High-energy (59 pJ), low-jitter (250 fs), high-extinction ratio (800), and short (14.5 ps FWHM) pulses were generated by gain-switching of a tapered stripe gain-guided laser diode (LD) via resonant driving. These characteristics are attributed to a s
Publikováno v:
Electronics Letters. 33:1579
A new optoelectronic RF switch, the photo-injection PIN switch, offers high power and efficiency. The authors report series switching of 20 to 50 W RF power, the smaller case having insertion losses of 0.13 and 0.05 dB at 50 and 400 mW optical contro
Publikováno v:
Twenty-Third Asilomar Conference on Signals, Systems and Computers, 1989..
Autor:
D.J. Albares
Publikováno v:
IEE Proceedings J Optoelectronics. 133:211