Zobrazeno 1 - 10
of 245
pro vyhledávání: '"D.H. Lu"'
Publikováno v:
Case Studies in Construction Materials, Vol 20, Iss , Pp e02946- (2024)
Owing to the higher strength-to-weight ratio and elastic modulus as well as more cost-effective, high-strength concrete (HSC) is now becoming increasing popular. However, the huge demand of HSC results in over-exploitation of river sand (RS) and othe
Externí odkaz:
https://doaj.org/article/8ee1e2f7d7504a7e8052bfa60416df6c
Akademický článek
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Akademický článek
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Autor:
G. Liu, Xiongzhang Liu, Y.Y. Zhao, Yuan Wu, Z.P. Lu, Easo P. George, Zitian Fan, N. Gao, D.H. Lu, G.H. Liu
Publikováno v:
Journal of Alloys and Compounds. 792:1028-1035
The equiatomic CrMnFeCoNi high-entropy alloy (HEA) exhibits outstanding toughness and excellent strength-ductility combination at cryogenic temperatures. However, its strength is relatively low at room temperature. In order to strengthen this HEA, mi
Publikováno v:
Vacuum. 192:110441
Since metallic glass thin films (MGTFs) are commonly used in the atmosphere of air, the study on the evolution of structure, morphology, and mechanical properties of MGTFs exposed to air is of great significance for the practical application of MGTFs
Publikováno v:
Nature Materials. 20:473
Autor:
K.M., Shen, F., Ronning, D.H., Lu, F., Baumberger, Baumberger, F., N.J.C., Ingle, W.S., Lee, W., Meevasana, Meevasana, W., Kohsaka, yuhki, Azuma, Masaki, Takano, Mikio, takagi, masaaki, Z.-X., Shen
Publikováno v:
Science. 307:901-904
Autor:
Zhuan Bian, Yaling Song, Changning Wang, D.H. Lu, Xiaoqian Ye, J. Li, Mingwen Fan, Bin Peng, H.L. Fan
Publikováno v:
British Journal of Oral and Maxillofacial Surgery. 44:322-324
Cherubism is a benign lesion that causes painless symmetrical enlargement of the jaws, usually with a familial tendency. We describe in two Chinese families two cases of the aggressive form of cherubism with extensive swelling on both sides of the ma
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profi