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Publikováno v:
IEEE Transactions on Electron Devices. 42:2242-2246
Analytical models of threshold voltage and inversion charge for the graded SiGe-channel modulation-doped p-MOSFETs have been derived and verified by SEDAN-3 simulation. The effect of threshold voltage adjustment on hole confinement, and the increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd3abd51e74c41274c8243e4b20d31e
https://doi.org/10.1109/16.477788
https://doi.org/10.1109/16.477788
