Zobrazeno 1 - 10
of 234
pro vyhledávání: '"D.G. Hasko"'
Autor:
C.C. Yao, S. M. Gardiner, Wooyoung Lee, Byoung-Chul Choi, Yongbing Xu, Atsufumi Hirohata, D.G. Hasko, Sean McPhail, J. A. C. Bland, H. T. Leung
Publikováno v:
Journal of Applied Physics. 87:3032-3036
The magnetization reversal process in permalloy (Ni80Fe20) wire junction structures has been investigated using magnetoresistance (MR) measurements and scanning Kerr microscopy. A combination of electron beam lithography and a lift-off process has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef6a1c8649873811ecd76b4e596e9ee
https://doi.org/10.1063/1.372295
https://doi.org/10.1063/1.372295
Akademický článek
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Autor:
Stuart Holmes, Wooyoung Lee, S. M. Gardiner, C.C. Yao, D.G. Hasko, Yongbing Xu, Atsufumi Hirohata, H. T. Leung, J. A. C. Bland
Publikováno v:
Journal of Magnetism and Magnetic Materials. :1845-1847
The domain configurations in permalloy wires (30 nm thick, 1–50 μm wide and 210 μm long) with a central ‘bowtie’ (10 μm long) were investigated in both their demagnetized and remanent states using magnetic force microscopy (MFM) and the resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68dcc44f5b508a98196d8758036f5c5b
https://doi.org/10.1016/s0304-8853(00)00880-5
https://doi.org/10.1016/s0304-8853(00)00880-5
Autor:
Wooyoung Lee, J. A. C. Bland, Stuart Holmes, Atsufumi Hirohata, D.G. Hasko, C.C. Yao, S. M. Gardiner, H. T. Leung, Yongbing Xu
Publikováno v:
Journal of Applied Physics. 87:4727-4729
The domain configuration in permalloy wires (30 nm thick, 10 μm wide, and 205 μm long) with a wide size range of a narrow central bridge (5 μm long and w μm wide; 0.5⩽w⩽10 μm) were investigated in both their demagnetized and remanent states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad7c5cb7478a356e5d0ab6477c266c9
https://doi.org/10.1063/1.373140
https://doi.org/10.1063/1.373140
Autor:
B.-Ch. Choi, W. Zhang, D.G. Hasko, Atsufumi Hirohata, Yongbing Xu, C.C. Yao, H. T. Leung, Wooyoung Lee, J. A. C. Bland
Publikováno v:
IEEE Transactions on Magnetics. 35:3475-3477
The magnetization reversal and magnetic anisotropy in Co network structures have been studied using magneto-optic Kerr effect (MOKE). An enhancement of the coercivity is observed in the network structures and is attributed to the pinning of domain wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c9f489b1cae724917a907355ec7450a
https://doi.org/10.1109/20.800562
https://doi.org/10.1109/20.800562
Publikováno v:
IEEE Transactions on Magnetics. 35:3616-3618
The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micron-scale Ni/sub 80/Fe/sub 20/ six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 /spl Aring/ Au/300 A Ni/sub 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e823ef4d94977a8ac46da1ba717079
https://doi.org/10.1109/20.800608
https://doi.org/10.1109/20.800608
Autor:
null Seung-Beck Lee, A.-S. The, K.B.K. Teo, D.G. Hasko, H. Ahmed, W.I. Milne, G.A.J. Amaratunga
Publikováno v:
4th IEEE International Conference on Vacuum Electronics, 2003.
Fabrication and operation of a carbon nanotube lateral field emission device is reported. Compared to vertical field emitters using carbon nanotube cathodes, it has less alignment problems since the anode is fabricated at the same time as the cathode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d9e633e03ec73eec56e482bbfc867c7
https://doi.org/10.1109/ivec.2003.1286062
https://doi.org/10.1109/ivec.2003.1286062
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ec5598b68c22d1319cbbf7edae61b66
https://doi.org/10.1109/imnc.2003.1268521
https://doi.org/10.1109/imnc.2003.1268521
A polycrystalline-silicon thin-film transistor (TFT), with a single grain boundary (GB) present in the channel, is simulated using two-dimensional numerical simulation, which includes a model of deep trap states at GBs. It is observed that the potent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d45c23f50c4079d3c3fe3d08a715717c
https://eprints.soton.ac.uk/266204/
https://eprints.soton.ac.uk/266204/
Publikováno v:
IEEE International Magnetics Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce8273db780d932e53be1ceb365a389
https://doi.org/10.1109/intmag.1999.837358
https://doi.org/10.1109/intmag.1999.837358