Zobrazeno 1 - 10
of 60
pro vyhledávání: '"D.G Ebling"'
Publikováno v:
Diamond and Related Materials. 11:892-895
In this study we investigate AlxGa1−xN/AlN heterostructure layers grown on c-plane sapphire by RF-plasma enhanced molecular beam epitaxy. The Al mole fraction was varied through the entire range of compositions (0≤x≤1), and was determined from
Publikováno v:
Journal of Crystal Growth. :453-457
To study the influence of the growth parameters on structural properties and crystal quality epitaxial layers of AlN and Al x Ga 1-x N (x = 0-1) were grown in an RF-plasma enhanced MBE-system on Si-terminated (00.1) SiC, (00.1) sapphire and (111) Si
Publikováno v:
Diamond and Related Materials. 10:1300-1303
The optical properties of epitaxial aluminum nitride (AlN) films grown on sapphire, SiC, and Si substrates have been investigated in the (2–6.3) eV photon energy range using cathodoluminescence (CL) at liquid nitrogen temperature. Besides a broad l
Publikováno v:
Scopus-Elsevier
Autor:
D.G Ebling, V. Schwegler, C. Kirchner, Markus Kamp, K. Bitzer, A. Link, Rolf Sauer, Wolfgang Limmer, Klaus-Werner Benz
Publikováno v:
Journal of Applied Physics. 86:6256-6260
The frequencies and dampings of the zone-center optical phonons E2 and A1(LO) in wurtzite-type GaN and AlN layers have been measured by Raman spectroscopy in the temperature range from 85 to 760 K. The GaN layer was grown by metalorganic vapor phase
Publikováno v:
Journal of Crystal Growth. :411-414
Aluminum nitride layers were grown on Si-terminated SiC (0 0 0 1) at various substrate temperatures, growth rates, and V/III-ratios in a RF-plasma enhanced MBE system. Surface morphology detected by AFM is strongly influenced by V/III-ratio. Smooth s
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 380:153-156
CdTe 0.9 Se 0.1 :Cl is a detector grade material for gamma and X-rays. Its high resistivity and the high mobility lifetime product yield a high charge collection efficiency of 90 percent. CdTe 0.9 Se 0.1 :Cl was used for the first time to built up a
Autor:
C. Eiche, A. V. Egorov, M. Salk, K.W. Benz, Michael Fiederle, D.G Ebling, W. Joerger, Alexander S. Senchenkov
Publikováno v:
Journal of Crystal Growth. 166:256-260
The influence of growth conditions on radiation detector performance was studied by examining Cd(Te,Se):Cl crystals. They were grown by the travelling heater method under microgravity conditions during the PHOTON 8 mission. An additional forced conve
Publikováno v:
Journal of Crystal Growth. 166:245-250
CdTe:Cl crystals were grown from the liquid and from the vapour phase under microgravity (μg) conditions on board the unmanned EURECA I mission. The resistivity distribution of the grown crystals was measured by time dependent charge measurement (TD
Publikováno v:
Berichte der Bunsengesellschaft für physikalische Chemie. 99:1421-1426
Methods of surface analysis and micromodification using the scanning electrochemical microscope (SECM) are described. An ultramicroelectrode (UME) is scanned in a liquid electrolyte a few microns above a sample's surface. The principles of SECM are e