Zobrazeno 1 - 10
of 96
pro vyhledávání: '"D.E. Lacklison"'
Autor:
S N Novikov, L.B Flannery, C. T. Foxon, J.W. Orton, Ian Harrison, A. V. Andrianov, D.E. Lacklison, Tin S. Cheng, B. Ya. Ber, Yu.A. Kudriavtsev, S. E. Hooper, D J Dewsnip
Publikováno v:
Semiconductor Science and Technology. 13:927-935
We describe measurements of the electrical and luminescence properties of Mg-doped GaN films grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectroscopy measurements were used to determine the tota
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1fe58fb4d39df2d5d63787365a51918
https://doi.org/10.1088/0268-1242/13/8/018
https://doi.org/10.1088/0268-1242/13/8/018
Autor:
S. E. Hooper, D.E. Lacklison, Ian Harrison, A. V. Andrianov, G B Ren, J.W. Orton, Tin S. Cheng, C. T. Foxon, D J Dewsnip
Publikováno v:
Semiconductor Science and Technology. 13:500-504
We report new lines in the photoluminescence (PL) spectrum of lightly Be-doped GaN. The low-temperature PL spectrum of the lightly doped sample is dominated by a transition at 3.385 eV with first and second LO phonon replicas. Power-resolved PL measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8663e61aacf61eb9ba97917d0cd9b1e2
https://doi.org/10.1088/0268-1242/13/5/010
https://doi.org/10.1088/0268-1242/13/5/010
Autor:
Tin S. Cheng, J.W. Orton, Yu.A. Kudriavtsev, B. Ya. Ber, D.E. Lacklison, C. T. Foxon, A. V. Merkulov, Sergei V. Novikov
Publikováno v:
Semiconductor Science and Technology. 13:71-74
The incorporation of magnesium and carbon in GaN grown by molecular beam epitaxy (MBE) has been investigated by secondary ion mass spectroscopy (SIMS) and other techniques. We have grown Mg:GaN in a wide range of chemical concentrations -. Low temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44195db6d141f5da8d7fce692f10994
https://doi.org/10.1088/0268-1242/13/1/010
https://doi.org/10.1088/0268-1242/13/1/010
Publikováno v:
Materials Science and Engineering: B. 50:307-310
We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 10 18 cm −3 and a mobility of 5 cm 2 V −1 s −1 . The spectral response of the detector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::988cd07a1e82eef103bb1b2e4675985f
https://doi.org/10.1016/s0921-5107(97)00195-5
https://doi.org/10.1016/s0921-5107(97)00195-5
Autor:
Tin S. Cheng, D.E. Lacklison, D J Dewsnip, A. V. Andrianov, J.W. Orton, C. T. Foxon, S. E. Hooper, L. C. Jenkins
Publikováno v:
Solid-State Electronics. 41:219-222
We report the results of photoluminescence measurements of four MBE samples of GaN doped with Si at levels in the range 10 17 –10 19 cm −3 . At the lower doping levels the near band edge emission is consistent with exciton recombination, being do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d920ee70c293d80516ed6296c42b159
https://doi.org/10.1016/s0038-1101(96)00170-0
https://doi.org/10.1016/s0038-1101(96)00170-0
Autor:
G B Ren, S. E. Hooper, D.E. Lacklison, J. Morgan, C. T. Foxon, Ian Harrison, A. V. Andrianov, Tin S. Cheng, J.W. Orton, D J Dewsnip
Publikováno v:
Semiconductor Science and Technology. 12:55-58
P-type doping of molecular beam epitaxy grown GaN has been investigated using beryllium, magnesium and carbon, the sample being characterized by luminescence under optical excitation by He - Cd laser light of energy 3.815 eV. Doping resulted in a str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2431eb86a175cbc4a68f9dc17822933
https://doi.org/10.1088/0268-1242/12/1/011
https://doi.org/10.1088/0268-1242/12/1/011
Autor:
J.W. Orton, A. V. Andrianov, Tin S. Cheng, J.F.H. Nicholls, D.E. Lacklison, K.P. O'Donnell, C. T. Foxon
Publikováno v:
Semiconductor Science and Technology. 12:59-63
GaN films were grown by the MBE method on substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7225af87d8778c7e0f2690ec5c955166
https://doi.org/10.1088/0268-1242/12/1/012
https://doi.org/10.1088/0268-1242/12/1/012
Publikováno v:
Materials Science and Engineering: B. 43:242-245
We have recently found evidence of new donor acceptor pair (DAP) luminescence in molecular beam epitaxy (MBE) grown films. A variety of nominally undoped samples have been studied by photoluminescence (PL) over a temperature range of 5-300 K. The sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d054d5a4c604a2482e5629fb809d6ba3
https://doi.org/10.1016/s0921-5107(96)01875-2
https://doi.org/10.1016/s0921-5107(96)01875-2
Autor:
D.E. Lacklison, J.W. Orton, S. E. Hooper, L. C. Jenkins, Tin S. Cheng, C. T. Foxon, J.D. Dewsnip
Publikováno v:
Journal of Crystal Growth. 166:597-600
Both zinc-blende and wurtzite GaN layers were grown by a modified molecular beam epitaxy (MBE) method. These layers were grown on semi-insulating GaAs(100) substrates and doped with silicon and beryllium as n- and p-type dopants. The structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd0d11359fb1df213ff60516942c487
https://doi.org/10.1016/0022-0248(96)00057-7
https://doi.org/10.1016/0022-0248(96)00057-7
Autor:
Tin S. Cheng, B. Ya. Ber, Sergei V. Novikov, L. C. Jenkins, S. E. Hooper, J.W. Orton, C. T. Foxon, D.E. Lacklison, A. V. Merkulov
Publikováno v:
Semiconductor Science and Technology. 11:538-541
We have studied the incorporation of Be and Si in GaN grown using molecular beam epitaxy (MBE). From secondary-ion mass spectroscopy (SIMS) measurements, Be was found to have an enhanced diffusion rate at high concentration similar to the behaviour o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e5d84066b637e2c532ab86adfb6208
https://doi.org/10.1088/0268-1242/11/4/014
https://doi.org/10.1088/0268-1242/11/4/014